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Alexander A. Lebedev
Researcher at Ioffe Institute
Publications - 72
Citations - 419
Alexander A. Lebedev is an academic researcher from Ioffe Institute. The author has contributed to research in topics: Graphene & Silicon carbide. The author has an hindex of 9, co-authored 72 publications receiving 293 citations. Previous affiliations of Alexander A. Lebedev include Baltic State Technical University & Russian Academy of Sciences.
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Graphene Nanoribbons for Electronic Devices
Zhansong Geng,Bernd Hähnlein,Ralf Granzner,Manuel Auge,Alexander A. Lebedev,Valery Yu. Davydov,M. Kittler,Jörg Pezoldt,Frank Schwierz +8 more
TL;DR: In this article, the suitability of graphene nanoribbons devices for nanoelectronics was discussed and three specific device types were discussed: MOSFETs, side-gate transistors, and three terminal junctions.
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Process induced deep-level defects in high purity silicon
TL;DR: In this paper, it was shown that dominant electron traps with ionization energies of 0.28 and 0.54 eV of double level donor have low recombination activity, but affect the resistivity of high purity Si and play a key role in limiting the p-n junction breakdown voltage.
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Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes
TL;DR: In this paper, the authors report the results of the high energy (0.9 µm) electron irradiation impact on the electrical properties of high voltage Ni/4H-SiC Schottky diodes.
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Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes
TL;DR: In this article, the current voltage characteristics and low-frequency noise in high voltage 4H-SiC junction barrier Schottky diodes irradiated with high energy (15 MeV) protons were studied at different temperatures and irradiation doses.
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Influence of the defect density (twins boundaries) on electrical parameters of 3C-SiC epitaxial films
Alexander A. Lebedev,Pavel L. Abramov,S. P. Lebedev,Gagik A. Oganesyan,Alla S. Tregubova,Dmitrii V. Shamshur +5 more
TL;DR: In this paper, 3C-SiC epitaxial layers were grown by sublimation epitaxy in a vacuum on the (0001)C face of 6H -SiC substrates produced by the Lely method.