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Open AccessJournal ArticleDOI

Germanium microlasers on metallic pedestals

TLDR
In this paper, a tensile-strained germanium microdisks have been fabricated with metallic pedestals, and the transferred tensile strain leads to a thin film with a direct bandgap.
Abstract
Strain engineering is a powerful approach in micro- and optoelectronics to enhance carrier mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics. The dielectric stressors and bonding interfaces used for strain engineering in photonics can however limit thermal dissipation and the maximum operation temperature of devices. We demonstrate a new approach for enhanced thermal dissipation with stressor layers by combining metals and dielectrics. The method is applied to the germanium semiconductor. All-around tensile-strained germanium microdisks have been fabricated with metallic pedestals. The transferred tensile strain leads to a germanium thin film with a direct bandgap. Under continuous wave optical pumping, the emission of the whispering gallery modes is characterized by a threshold and an abrupt linewidth narrowing by a factor larger than 2. The occurrence of stimulated emission is corroborated by modeling of the optical gain. This demonstrates lasing with pure germanium microdisks.

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Citations
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Journal ArticleDOI

Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys

TL;DR: In this article, a 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band gap semiconductor.
Journal ArticleDOI

Lasing in strained germanium microbridges.

TL;DR: Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics and finding a quantum efficiency close to 100%.
References
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Journal ArticleDOI

Lasing in direct-bandgap GeSn alloy grown on Si

TL;DR: In this paper, a direct bandgap GeSn alloy, grown directly onto Si(001), was used for experimentally demonstrating lasing threshold and linewidth narrowing at low temperatures.
Journal ArticleDOI

An electrically pumped germanium laser

TL;DR: Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated and a Germanium gain spectrum of nearly 200nm is observed.
Journal ArticleDOI

Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

TL;DR: In this paper, the impact of strain on carrier mobility in Si n-and pMOSFETs by considering strain-induced band splitting, band warping and consequent carrier repopulation, and altered conductivity effective mass and scattering rate is discussed.
Journal ArticleDOI

Second-harmonic generation in silicon waveguides strained by silicon nitride

TL;DR: It is shown that a sizeable second-order nonlinearity at optical wavelengths is induced in a silicon waveguide by using a stressing silicon nitride overlayer and envisage that nonlinear strained silicon could provide a competing platform for a new class of integrated light sources spanning the near- to mid-infrared spectrum from 1.2 to 10 μm.
Journal ArticleDOI

Room-temperature continuous-wave lasing in GaN/InGaN microdisks

TL;DR: In this article, the authors report fabrication and optical measurements of GaN-based microdisk lasers with a very low threshold of 300 W cm−2, orders of magnitude lower than any previous GaN microdisk laser.
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