Germanium microlasers on metallic pedestals
Anas Elbaz,Anas Elbaz,M. El Kurdi,Abdelhanin Aassime,Sébastien Sauvage,Xavier Checoury,Isabelle Sagnes,Charles Baudot,Frederic Boeuf,Philippe Boucaud +9 more
- Vol. 3, Iss: 10, pp 106102
TLDR
In this paper, a tensile-strained germanium microdisks have been fabricated with metallic pedestals, and the transferred tensile strain leads to a thin film with a direct bandgap.Abstract:
Strain engineering is a powerful approach in micro- and optoelectronics to enhance carrier mobility, tune the bandgap of heterostructures, or break lattice symmetry for nonlinear optics. The dielectric stressors and bonding interfaces used for strain engineering in photonics can however limit thermal dissipation and the maximum operation temperature of devices. We demonstrate a new approach for enhanced thermal dissipation with stressor layers by combining metals and dielectrics. The method is applied to the germanium semiconductor. All-around tensile-strained germanium microdisks have been fabricated with metallic pedestals. The transferred tensile strain leads to a germanium thin film with a direct bandgap. Under continuous wave optical pumping, the emission of the whispering gallery modes is characterized by a threshold and an abrupt linewidth narrowing by a factor larger than 2. The occurrence of stimulated emission is corroborated by modeling of the optical gain. This demonstrates lasing with pure germanium microdisks.read more
Citations
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Journal ArticleDOI
Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys
Anas Elbaz,Anas Elbaz,Dan Buca,Nils von den Driesch,Nils von den Driesch,Konstantinos Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,Sébastien Sauvage,Isabelle Sagnes,Antonino Foti,Razvigor Ossikovski,Jean-Michel Hartmann,Frederic Boeuf,Zoran Ikonic,Philippe Boucaud,Detlev Grützmacher,Detlev Grützmacher,Moustafa El Kurdi +20 more
TL;DR: In this article, a tensile strain was applied to a 300nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, to transform it into a direct-band gap semiconductor that supports lasing.
Journal ArticleDOI
Ultra-low threshold cw and pulsed lasing in tensile strained GeSn alloys
Anas Elbaz,Dan Buca,N. von den Driesch,K. Pantzas,Gilles Patriarche,Nicolas Zerounian,Etienne Herth,Xavier Checoury,S. Sauvage,I. Sagnes,Antonino Foti,Razvigor Ossikovski,J.M. Hartmann,Frederic Boeuf,Zoran Ikonic,P. Boucaud,Detlev Grützmacher,M. El Kurdi +17 more
TL;DR: In this article, a 300nm GeSn layer with 5.4 at.% Sn, which is an indirect band-gap semiconductor as-grown with a compressive strain of -0.32 %, is transformed via tensile strain engineering into a truly direct band gap semiconductor.
Journal ArticleDOI
GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain
Jérémie Chrétien,Nicolas Pauc,Francesco Armand Pilon,Francesco Armand Pilon,Mathieu Bertrand,Q. M. Thai,Lara Casiez,Nicolas Bernier,H. Dansas,Patrice Gergaud,E. Delamadeleine,Rami Khazaka,Hans Sigg,Jérôme Faist,Alexei Chelnokov,Vincent Reboud,Jean-Michel Hartmann,Vincent Calvo +17 more
TL;DR: Silicon photonics continues to progress tremendously, both in near-infrared datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated group IV semiconductor laser...
Journal ArticleDOI
Lasing in strained germanium microbridges.
F. Armand Pilon,F. Armand Pilon,A. Lyasota,Yann-Michel Niquet,Vincent Reboud,Vincent Calvo,Nicolas Pauc,Julie Widiez,Christopher Bonzon,J.M. Hartmann,Alexei Chelnokov,Jérôme Faist,Hans Sigg +12 more
TL;DR: Germanium (based) lasers are a promising route towards a fully CMOS-compatible light source, key to the further development of silicon photonics and finding a quantum efficiency close to 100%.
Journal ArticleDOI
Reduced Lasing Thresholds in GeSn Microdisk Cavities with Defect Management of the Optically Active Region
Anas Elbaz,Anas Elbaz,Riazul Arefin,Emilie Sakat,Binbin Wang,Etienne Herth,Gilles Patriarche,Antonino Foti,Razvigor Ossikovski,Sébastien Sauvage,Xavier Checoury,Konstantinos Pantzas,Isabelle Sagnes,Jérémie Chrétien,Lara Casiez,Mathieu Bertrand,Vincent Calvo,Nicolas Pauc,Alexei Chelnokov,Philippe Boucaud,Frederic Boeuf,Vincent Reboud,Jean-Michel Hartmann,Moustafa El Kurdi +23 more
TL;DR: GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor compatible approach.
References
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Journal ArticleDOI
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Journal ArticleDOI
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
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