Journal ArticleDOI
High-Gain Inverters Based on WSe2 Complementary Field-Effect Transistors
Mahmut Tosun,Mahmut Tosun,Steven Chuang,Steven Chuang,Hui Fang,Hui Fang,Angada B. Sachid,Mark Hettick,Mark Hettick,Yongjing Lin,Yongjing Lin,Yuping Zeng,Yuping Zeng,Ali Javey,Ali Javey +14 more
TLDR
In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized, and a complementary logic inverter is demonstrated.Abstract:
In this work, the operation of n- and p-type field-effect transistors (FETs) on the same WSe2 flake is realized,and a complementary logic inverter is demonstrated. The p-FET is fabricated by contacting WSe2 with a high work function metal, Pt, which facilities hole injection at the source contact. The n-FET is realized by utilizing selective surface charge transfer doping with potassium to form degenerately doped n+ contacts for electron injection. An ON/OFF current ratio of >104 is achieved for both n- and p-FETs with similar ON current densities. A dc voltage gain of >12 is measured for the complementary WSe2 inverter. This work presents an important advance toward realization of complementary logic devices based on layered chalcogenide semiconductors for electronic applications.read more
Citations
More filters
Journal ArticleDOI
Photocurrent generation with two-dimensional van der Waals semiconductors.
Michele Buscema,Joshua O. Island,Dirk J. Groenendijk,Sofya I. Blanter,Gary A. Steele,Herre S. J. van der Zant,Andres Castellanos-Gomez +6 more
TL;DR: The state-of-the-art in photodetectors based on semiconducting 2D materials are reviewed, focusing on the transition metal dichalcogenides, novel van der Waals materials, black phosphorus, and heterostructures.
Journal ArticleDOI
Two-dimensional materials and their prospects in transistor electronics
TL;DR: A wish list of properties for a good transistor channel material is composed and to what extent the two-dimensional materials fulfill the criteria of the list is examined and a balanced view of both the pros and cons of these devices is provided.
Journal ArticleDOI
Dual-gated MoS2/WSe2 van der Waals tunnel diodes and transistors.
Tania Roy,Mahmut Tosun,Mahmut Tosun,Xi Cao,Hui Fang,Hui Fang,Der Hsien Lien,Der Hsien Lien,Der Hsien Lien,Peida Zhao,Peida Zhao,Yu Ze Chen,Yu-Lun Chueh,Jing Guo,Ali Javey,Ali Javey +15 more
TL;DR: This work experimentally demonstrate interlayer band-to-band tunneling in vertical MoS2/WSe2 van der Waals (vdW) heterostructures using a dual-gate device architecture with important implications toward the design of atomically thin tunnel transistors.
Journal ArticleDOI
Beyond Graphene: Progress in Novel Two-Dimensional Materials and van der Waals Solids
TL;DR: In this paper, the authors provide a holistic overview of the different synthesis and characterization techniques, electronic and photonic device characteristics, and catalytic properties of transition metal dichalcogenides and their heterostructures, and comment on the challenges that need to be overcome for full-scale commercial implementation of this novel class of layered materials.
Journal ArticleDOI
Two-dimensional transition metal dichalcogenides: interface and defect engineering
TL;DR: Two-dimensional transition metal dichalcogenides (TMDCs) have been considered as promising candidates for next generation nanoelectronics and their corresponding applications in electronic and optoelectronic devices.
References
More filters
Journal ArticleDOI
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Journal ArticleDOI
Controlling the Electronic Structure of Bilayer Graphene
TL;DR: In this paper, the authors describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission.
Journal ArticleDOI
Electrical Conductivity in Doped Polyacetylene.
C. K. Chiang,C. R. Fincher,Yung Woo Park,Alan J. Heeger,H. Shirakawa,E. J. Louis,S. C. Gau,Alan G. MacDiarmid +7 more
TL;DR: In this paper, a metal-to-insulator transition at dopant concentrations near 1% was shown for polyacetylene, a new class of conducting polymers in which the electrical conductivity can be systematically and continuously varied over a range of eleven orders of magnitude.
Journal ArticleDOI
High Performance Multilayer MoS2 Transistors with Scandium Contacts
TL;DR: It is demonstrated that through a proper understanding and design of source/drain contacts and the right choice of number of MoS(2) layers the excellent intrinsic properties of this 2-D material can be harvested.