Journal ArticleDOI
On the Role of Interface States in AlGaN/GaN Schottky Recessed Diodes: Physical Insights, Performance Tradeoff, and Engineering Guidelines
TLDR
In this article, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schittky diode is physically modeled using device TCAD and detailed experiments.Abstract:
In this paper, the impact of donor and acceptor states at the Schottky interface of fully recessed AlGaN/GaN Schottky diode is physically modeled using device TCAD and detailed experiments. This allowed us to develop physical insights into recessed AlGaN/GaN diode’s reverse breakdown, reverse leakage, and ON-state performance as a function of interface states and provided design guidelines to engineer fully recessed AlGaN/GaN Schottky diode for the maximum reverse breakdown and least reverse leakage without compromising its ON-state performance. It has been observed that donor states are responsible for high reverse leakage and reduced breakdown performance in Schottky diodes. On the other hand, the presence of acceptor states at the interface improves the diode leakage and breakdown voltage. Experiments involve a number of dry and wet surface treatments to: 1) validate computational findings and 2) find ways to cure or passivate donor states affected Schottky interface/recessed region. The introduction of acceptor traps at the Schottky interface has been proposed and experimentally verified using the Fluorine implant to cure donor state-affected Schottky interface, which improves the breakdown and reverse leakage characteristics significantly.read more
Citations
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Journal ArticleDOI
Safe Operating Area of Polarization Super-junction GaN HEMTs and Diodes
TL;DR: In this paper, the safe operating area (SOA) assessment in polarization super-junction (PSJ)-based GaN high-electron mobility transistor (HEMT) and Schottky diode is presented.
Journal ArticleDOI
Electro-Thermo-Mechanical Reliability of Recessed Barrier AlGaN/GaN Schottky Diodes Under Pulse Switching Conditions
TL;DR: In this paper, the degradation of the Schottky diode during both free-wheeling operation (high forward current injection) and reverse blocking state (high-voltage stress) was studied.
Journal ArticleDOI
Forward and reverse current transport mechanisms in tungsten carbide Schottky contacts on AlGaN/GaN heterostructures
TL;DR: In this article, the forward and reverse current transport mechanisms in as-deposited and 400°C annealed tungsten carbide (WC) Schottky contacts on AlGaN/GaN heterostructures have been studied.
Journal ArticleDOI
Influence of surface trap states on RF/microwave performance of lateral AlGaN/GaN Schottky barrier diode
TL;DR: In this article, the influence of surface traps/states on RF and microwave performance of fully recessed Schottky anode AlGaN/GaN lateral SBD (L-SBD) using numeri...
Journal ArticleDOI
Mechanisms of a Rectifying TiN Gate Contact for AlGaN $/$ GaN HEMTs on Silicon Substrate
Hassane Ouazzani Chahdi,Brahim Benbakhti,Maghnia Mattalah,J.-C. Gerbedoen,Abdelatif Jaouad,Nour Eddine Bourzgui,Ali Soltani +6 more
TL;DR: In this paper, a rectifying TiN gate contact technology is developed for AlGaN $/$ GaN based micro and nanometer HEMTs, where a high compressive strain occurring in thinner TiN films (ranging from 5nm to 60nm), deposited by sputtering, leads to a reduction in tensile strain at the surface of AlGAN barrier.
References
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Book
Semiconductor Material and Device Characterization
TL;DR: In this article, the authors present a characterization of the resistivity of a two-point-versus-four-point probe in terms of the number of contacts and the amount of contacts in the probe.
Journal ArticleDOI
Studies of tunnel MOS diodes, I. Interface effects in silicon Schottky diodes
H C Card,E H Rhoderick +1 more
TL;DR: In this paper, a theoretical and experimental study has been made of silicon Schottky diodes in which the metal and semiconductor are separated by a thin interfacial film.
Journal ArticleDOI
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
TL;DR: In this paper, a novel approach was proposed to fabricate high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs based on fluoride-based plasma treatment of the gate region.
Journal ArticleDOI
Ionization Rates for Electrons and Holes in Silicon
TL;DR: In this article, the ionization rates for holes and electrons in silicon have been determined over the following ranges of field: for holes, (2.5-6.0)\ifmmode\times\else\texttimes\fi{}${10}^{5}$ volts
Journal ArticleDOI
Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode
TL;DR: In this paper, a method with an accurate control of threshold voltages of AlGaN/GaN high-electron mobility transistors (HEMTs) using a fluoride-based plasma treatment was presented.