A
Axel Eckmann
Researcher at University of Manchester
Publications - 24
Citations - 6499
Axel Eckmann is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Bilayer graphene. The author has an hindex of 18, co-authored 23 publications receiving 5559 citations.
Papers
More filters
Journal ArticleDOI
Strong light-matter interactions in heterostructures of atomically thin films.
L. Britnell,Ricardo M. Ribeiro,Ricardo M. Ribeiro,Axel Eckmann,Rashid Jalil,Branson D. Belle,Artem Mishchenko,Yong-Jin Kim,Yong-Jin Kim,Roman V. Gorbachev,Thanasis Georgiou,Sergey V. Morozov,Alexander N. Grigorenko,Andre K. Geim,Cinzia Casiraghi,Cinzia Casiraghi,A. H. Castro Neto,K. S. Novoselov +17 more
TL;DR: Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse, which allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).
Journal ArticleDOI
Probing the Nature of Defects in Graphene by Raman Spectroscopy
Axel Eckmann,Alexandre Felten,Alexandre Felten,Artem Mishchenko,L. Britnell,Ralph Krupke,Kostya S. Novoselov,Cinzia Casiraghi +7 more
TL;DR: A detailed analysis of the Raman spectra of graphene containing different type of defects is presented, finding that the intensity ratio of the D and D' peak is maximum for sp(3)-defects, it decreases for vacancy-like defects, and it reaches a minimum for boundaries in graphite.
Journal ArticleDOI
Commensurate-incommensurate transition in graphene on hexagonal boron nitride
Colin R. Woods,L. Britnell,Axel Eckmann,Ruisong Ma,Jianchen Lu,Haiming Guo,Xiao Lin,Geliang Yu,Yang Cao,Roman V. Gorbachev,Andrey V. Kretinin,Jaesung Park,Jaesung Park,Leonid Ponomarenko,Mikhail I. Katsnelson,Yu. N. Gornostyrev,Kenji Watanabe,Takashi Taniguchi,Cinzia Casiraghi,Hong-Jun Gao,Andre K. Geim,Konstantin S. Novoselov +21 more
TL;DR: In this article, the authors reported a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN), where areas with matching lattice constants are separated by domain walls that accumulate the generated strain.
Journal ArticleDOI
Raman study on defective graphene: Effect of the excitation energy, type, and amount of defects
Axel Eckmann,Alexandre Felten,Ivan Verzhbitskiy,Rebecca Davey,Cinzia Casiraghi,Cinzia Casiraghi +5 more
TL;DR: In this article, the Raman cross section of the crystal lattice after defect introduction per unit of damaged area, where x = D or D �, was observed to be 0.
Journal ArticleDOI
Raman Spectroscopy of Boron-Doped Single-Layer Graphene
Yoong Ahm Kim,Kazunori Fujisawa,Hiroyuki Muramatsu,Takuya Hayashi,Morinobu Endo,Toshihiko Fujimori,Katsumi Kaneko,Mauricio Terrones,Jan Behrends,Axel Eckmann,Cinzia Casiraghi,Cinzia Casiraghi,Kostya S. Novoselov,Riichiro Saito,Mildred S. Dresselhaus +14 more
TL;DR: It is reported that boron atoms can be efficiently substituted for carbon in graphene and Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.