Axel Eckmann

TL;DR: Transition metal dichalcogenides sandwiched between two layers of graphene produce an enhanced photoresponse, which allows development of extremely efficient flexible photovoltaic devices with photoresponsivity above 0.1 ampere per watt (corresponding to an external quantum efficiency of above 30%).

TL;DR: A detailed analysis of the Raman spectra of graphene containing different type of defects is presented, finding that the intensity ratio of the D and D' peak is maximum for sp(3)-defects, it decreases for vacancy-like defects, and it reaches a minimum for boundaries in graphite.

TL;DR: In this article, the authors reported a commensurate-incommensurate transition for graphene on top of hexagonal boron nitride (hBN), where areas with matching lattice constants are separated by domain walls that accumulate the generated strain.

TL;DR: In this article, the Raman cross section of the crystal lattice after defect introduction per unit of damaged area, where x = D or D �, was observed to be 0.

TL;DR: It is reported that boron atoms can be efficiently substituted for carbon in graphene and Boron-doped graphene appears to be a useful tool for engineering the physical and chemical properties of graphene.