Showing papers by "Barry Miller published in 1989"
TL;DR: In this article, a photonic integrated circuit composed of three 1.5 μm wavelength multiple quantum well tunable lasers with a passive optical power combiner and an optical output amplifier is described.
Abstract: We describe a photonic integrated circuit composed of three 1.5 μm wavelength multiple quantum well tunable lasers with a passive optical power combiner and an optical output amplifier. Independent channel operation with 1–2 mW/channel output power is demonstrated.
120 citations
TL;DR: In this article, active mode locking in a monolithic long-cavity semiconductor laser, operating at 1.5 µm wavelength, was reported. And the highest repetition rate achieved with an actively mode-locked laser was achieved with a modulation depth of 97%.
Abstract: We report active mode locking in a monolithic long-cavity semiconductor laser, operating at 1.5 µm wavelength. Pulses with durations of 4 ps at repetition rates up to 40 GHz have been achieved, with a modulation depth of 97%. This is the first report of active mode locking in a monolithic device, and the highest repetition rate achieved with an actively mode locked laser.
114 citations
Proceedings Article•
24 Apr 1989112 citations
TL;DR: In this paper, the authors demonstrate that large quantum-confined Stark effect can be obtained in high quality InGaAsP/InP quantum well p−i−n heterostructures.
Abstract: We demonstrate for the first time that large quantum‐confined Stark effect can be obtained in high quality InGaAsP/InP quantum well p‐i‐n heterostructures. The compositional flexibility of this material system is particularly suited for quantum well device applications in optical communications systems operating between 1.55 and 1.3 μm. We measure the magnitude of the shift of the ground‐state exciton transition with applied electric field and find that it is significantly enhanced over ternary wells. We have also determined the electro‐optic intensity and phase modulation response in these structures.
102 citations
TL;DR: In this paper, the first integrated heterodyne receiver capable of real-time data reception with error-free reception of FSK-modulated pseudorandom digital code at 105 Mbit/s was presented.
Abstract: We describe the fabrication and performance of the first integrated heterodyne receiver capable of actual heterodyne data reception. Integrating a continuously tunable 1.5 μm MQW-DBR laser with a single-mode directional coupler/switch and zero-bias MQW waveguide photodetectors, we have achieved error-free reception of FSK-modulated pseudorandom digital code at 105 Mbit/s.
96 citations
TL;DR: In this paper, a NaCl color center was passively mode locked to produce 275fs transform-limited, pedestal-free pulses with a peak power as high as 3.7 kW.
Abstract: Using multiple-quantum-well (MQW) saturable absorbers, a NaCl color center was passively mode locked to produce 275-fs transform-limited, pedestal-free pulses with a peak power as high as 3.7 kW. The pulses are tunable from lambda =1.59 to 1.7 mu m by choosing MQWs with different bandgaps. The output pulses from the laser were shortened to 25 fs using the technique of soliton compression in a fiber. The steady-state operation of the laser requires the combination of a fast saturable absorber and gain saturation. >
85 citations
TL;DR: In this paper, excitonic electrorefraction was used in reverse-biased InGaAsP/InP quantum well heterostructures to produce directional coupler switches with active lengths under 600 μm operating at 13 and 155 μm wavelengths.
Abstract: We have utilized excitonic electrorefraction in reverse‐biased InGaAsP/InP quantum well heterostructures to produce directional coupler switches with active lengths under 600 μm operating at 13 and 155 μm wavelengths
60 citations
TL;DR: In this article, a planar surface was constructed from holographic photolithography from a wafer having a single 100 A InGaAs quantum well, which was then recoated with InP using atmospheric pressure organometallic vapor phase epitaxy.
Abstract: Quantum wires ≊300–400 A wide were fabricated by holographic photolithography from a wafer having a single 100 A InGaAs quantum well. The wires were then recoated with InP using atmospheric pressure organometallic vapor phase epitaxy, which resulted in a planar surface. A high‐resolution scanning electron microscope showed little deterioration of the wires due to recoating. At moderate intensities ≊10 W/cm2, photoluminescence (PL) studies showed a small shift in energy (≊6 meV) and a slight line narrowing consistent with a one‐dimensional structure. The quantum efficiency of the wires was comparable to the control wafer—above that expected from the fill factor of 17%. Some evidence of states below the energy gap is seen at low PL excitation, but these appear to saturate at higher excitations.
52 citations
TL;DR: In this paper, P ion implantation induced intermixing of In0.53Ga0.47As quantum wells embedded between InP barriers was studied for both standard furnace anneals at 650 °C and rapid thermal annesals at 750 Ã 0.
Abstract: We have studied P ion implantation induced intermixing of In0.53Ga0.47As quantum wells embedded between InP barriers. Data are presented for both standard furnace anneals at 650 °C and rapid thermal anneals at 750 °C. Low‐temperature photoluminescence and quantitative Auger electron spectroscopy were performed for furnace‐annealed samples for which photoluminescence shifts of ∼200 meV were in excellent agreement with the calculated band gap for the lattice matched composition determined by Auger spectroscopy. Photoluminescence studies of rapid thermal annealed samples yield an energy gap shift of ∼150 meV for annealing times of at least 10 s.
48 citations
TL;DR: In this paper, the orthorhombic splitting of the upper surface layers ( < 1 μm) of a single crystal Ba2YCu3O7−δ is reduced, differing by 10 to 30 percent from the bulk value.
Abstract: We find by transmission electron diffraction that the orthorhombic splitting of the upper surface layers ( <1 μm) of single crystal Ba2YCu3O7−δ is reduced, differing by 10 to 30 percent from the bulk value. We also find by transmission electron microscopy that in general the surfaces are of inferior quality and, thus, not representative of the bulk. These results have important consequences for those experiments that probe only the upper surface layers. By etching with Br/ethanol and HClO4/NaClO4 the poor quality surfaces are removed.
22 citations
TL;DR: In this paper, the electrical and magnetic properties of electrodeposits of silver, copper, and lead on Ba2YCu3O7 substrates were evaluated by two-and four-point resistivity measurements and magnetic susceptibility data on the resulting composite structure.
Abstract: The electrical and magnetic properties of electrodeposits of silver, copper, and lead on Ba2YCu3O7 substrates were evaluated by two‐ and four‐point resistivity measurements and magnetic susceptibility data on the resulting composite structure. With superconductors sufficiently dense to resist significant penetration by the nonaqueous solvents of the plating bath, no degradation of the bulk properties of the superconductor was observed in the magnetic measurements. These conclusions were supported by the resistivity results; furthermore, it was shown that the contact resistance between electrodeposited silver and the superconductor matched that for ultrasonically soldered indium.
TL;DR: In this article, the performance of InGaAs/InGaAsP multiple-quantum-well material as the absorbing medium in waveguide detectors is discussed, and it is shown that the carrier trapping problem in this quantumwell material combination is much less serious than that in other material systems.
Abstract: The performance of InGaAs/InGaAsP multiple-quantum-well material as the absorbing medium in waveguide detectors is discussed. No deleterious saturation effects were observed up to an absorbed power of approximately 1 mW, with strong enough absorption for a four-well separate confinement heterostructure to provide >or=80% quantum efficiency for lengths at least as short as 114 mu m. The frequency response up to 5 GHz shows only a simple parasitic-limited rolloff which matches the measured impedance. These results provide sound evidence that the carrier trapping problem in this quantum-well material combination is much less serious than that in other material systems. This has important consequences not only for quantum-well field effect optical devices, but also for photonic integration, since the same quantum-well layers can simultaneously serve as a gain medium and as a detecting medium. >
TL;DR: In this paper, bismuth strontium calcium cuprate superconductors with nominal composition have been examined by electrochemical techniques and are found to be both highly oxidizing compounds and reactive towards hydrogen ions.
Abstract: Bismuth strontium calcium cuprate superconductors with nominal composition, Bi/sub 2/(Sr, Ca)/sub 3/Cu/sub 2/O/sub 8/, have been examined by electrochemical techniques and are found to be both highly oxidizing compounds and reactive towards hydrogen ions. The chemical reactivity of 84K bismuth strontium calcium cuprate is similar to that of Ba/sub 2/YCu/sub 3/O/sub 7/. The dissolution reaction in acid is intrinsically fast; the authors observe H/sup +/ mass transport control in perchlorate solution. Dissolution rates can be altered and made selective by surface filming and post reactions of Bi/sup +3/, as in Cl/sup -/ solution. The stoichiometries of the acid reactions and for the etching of the Bi/sub 2/(Sr, Ca)/sub 3/Cu/sub 2/O/sub 8/ by ethylenediaminetetraacetate have been determined. Several etching solutions readily adaptable to controlled patterning or removal of these substrates are demonstrated.
TL;DR: In this article, a three-port optical AND gate based on GaInAs:Fe photoconductive switches operating at λ = 1.3 μm is demonstrated, and an electrical power contrast ratio of 12 dB is obtained in optical-to-electrical time division demultiplexing of a 1 GHz signal bit sequence by a 333.3 MHz clock with optical pulse energies of 100 fJ.
Abstract: A high-speed, three-port optical AND gate based on GaInAs:Fe photoconductive switches operating at λ = 1.3 μm is demonstrated. An electrical power contrast ratio of 12 dB is obtained in optical-to-electrical time-division demultiplexing of a 1 GHz signal bit sequence by a 333.3 MHz clock with optical pulse energies of 100 fJ.
Proceedings Article•
24 Apr 1989
TL;DR: In this article, the rotating disk electrodes of the high-Tc superconductor are anodized under fixed currents and rotation speeds in several aqueous electrolytes and the electrolyte solutions are subsequently analyzed by ICP-atomic emission spectroscopy.
Abstract: Rotating disk electrodes of the high-Tc superconductor are anodized under fixed currents and rotation speeds in several aqueous electrolytes and the electrolyte solutions are subsequently analyzed by ICP-atomic emission spectroscopy.
Proceedings Article•
01 Dec 1989TL;DR: In this article, the performance of InGaAs/InGaAsP multiple-quantum-well material as the absorbing medium in waveguide detectors is discussed, and it is shown that the carrier trapping problem in this quantumwell material combination is much less serious than that in other material systems.
Abstract: The performance of InGaAs/InGaAsP multiple-quantum-well material as the absorbing medium in waveguide detectors is discussed. No deleterious saturation effects were observed up to an absorbed power of approximately 1 mW, with strong enough absorption for a four-well separate confinement heterostructure to provide >or=80% quantum efficiency for lengths at least as short as 114 mu m. The frequency response up to 5 GHz shows only a simple parasitic-limited rolloff which matches the measured impedance. These results provide sound evidence that the carrier trapping problem in this quantum-well material combination is much less serious than that in other material systems. This has important consequences not only for quantum-well field effect optical devices, but also for photonic integration, since the same quantum-well layers can simultaneously serve as a gain medium and as a detecting medium.<>
TL;DR: In this article, the orthorhombic splitting of the upper surface layers of a single crystal Ba 2 YCu 3 O 7-δ (YBCO) is reduced by 10 to 30 percent from the bulk value.
Abstract: We find by transmission electron diffraction (TED) that the orthorhombic splitting of the upper surface layers ( μm) of single crystal Ba 2 YCu 3 O 7-δ (YBCO) is reduced, differing by 10 to 30 percent from the bulk value. We also find by transmission electron microscopy (TEM) that in general the surfaces are of inferior quality, and thus, not representative of the bulk. These results have important consequences for those experiments that probe only the upper surface layers. By etching with either Br/ethanol or HClO 4 /NaClO 4 the poor quality surfaces can be removed.