Debra S. Woolsey

TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.

TL;DR: In this paper, a conformal oxide film is used to fill the bottom of a trench formed in a semiconductor substrate and cover a top surface of the substrate, and then the oxide film can be etched off the top surface and inside the trench to leave a substantially flat layer of oxide having a target thickness at bottom of the trench.

TL;DR: In this article, a semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region, and an active trench extending through the well region and into the drift regions.

TL;DR: In this paper, the authors describe a planar field oxide structure that has been grown using a nitride layer as an oxidation mask, which is then converted to an oxide layer by an oxidation process using radicals of hydrogen and oxygen.

TL;DR: In this article, the effect of carrier gas on the gate oxide integrity (GOI) of thick gate oxide (400 A) for U-trench metaloxide-semiconductor field effect transistors UMOSFETs was investigated.