R
Richard Stokes
Researcher at Fairchild Semiconductor International, Inc.
Publications - 5
Citations - 689
Richard Stokes is an academic researcher from Fairchild Semiconductor International, Inc.. The author has contributed to research in topics: Trench & Semiconductor device. The author has an hindex of 3, co-authored 5 publications receiving 685 citations.
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Patent
Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more
TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.
Proceedings ArticleDOI
Avalanche instability in oxide charge balanced power MOSFETs
TL;DR: In this article, the authors proposed an optimum design for the charge balance region of power MOSFETs to solve the time dependant avalanche instabilities in the active cell and termination structures.
Patent
Methods and apparatus related to termination regions of a semiconductor device
Joseph A. Yedinak,Dean E. Probst,Richard Stokes,Suku Kim,Jason Higgs,Fred Session,Hui Chen,Steven Sapp,Jayson S. Preece,Mark L. Rinehimer +9 more
TL;DR: In this paper, a semiconductor region is represented by a trench, defined along a vertical axis and having a length aligned along a longitudinal axis orthogonal to the vertical axis.
Patent
Termination region of a semiconductor device
TL;DR: In this paper, a semiconductor region is represented by a trench, defined along a vertical axis and having a length aligned along a longitudinal axis orthogonal to the vertical axis.
Patent
Apparatus related to termination regions of a semiconductor device
Joseph A. Yedinak,Dean E. Probst,Richard Stokes,Suku Kim,Jason Higgs,Fred Session,Hui Chen,Steven Sapp,Jayson S. Preece,Mark L. Rinehimer +9 more
TL;DR: In this article, the authors define a trench defined within a semiconductor region and a bottom portion of the trench, the dielectric having a first portion disposed in the termination region of the semiconductor regions and a second portion disposing in the active region.