S
Steven Sapp
Researcher at Fairchild Semiconductor International, Inc.
Publications - Â 70
Citations - Â 2662
Steven Sapp is an academic researcher from Fairchild Semiconductor International, Inc.. The author has contributed to research in topics: Trench & Field-effect transistor. The author has an hindex of 21, co-authored 70 publications receiving 2657 citations.
Papers
More filters
Patent
Power semiconductor devices and methods of manufacture
Ashok Challa,Alan Elbanhawy,Thomas E. Grebs,Nathan Kraft,Dean E. Probst,Rodney S. Ridley,Steven Sapp,Qi Wang,Chongman Yun,J.G. Lee,Peter H. Wilson,Joseph A. Yedinak,J.Y. Jung,Hocheol Jang,Babak S. Sani,Richard Stokes,Gary M. Dolny,John Mytych,Becky Losee,Adam Selsley,Robert Herrick,James J. Murphy,Gordon K. Madson,Bruce D. Marchant,Christopher L. Rexer,Christopher Boguslaw Kocon,Debra S. Woolsey +26 more
TL;DR: In this article, a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance.
Patent
Dual trench power MOSFET
TL;DR: In this paper, a MOSFET includes a first semiconductor region of a first conductivity type, a gate trench which extends into the first semiconductors region, and a source trench, which is laterally spaced from the gate trench.
Patent
Field effect transistor and method of its manufacture
TL;DR: In this paper, a trenched field effect transistor is provided that includes a semiconductor substrate, a doped well surrounding the heavy body, and a pair of doped source junctions, positioned on opposite sides of the trench.
Patent
Monolithically integrated trench mosfet and schottky diode
TL;DR: In this article, a monolithically integrated Schottky diode together with a high performance trenched gate MOSFET is used to enhance the reverse voltage capability of the diode.
Patent
Trench-gate field effect transistors and methods of forming the same
Hamza Yilmaz,Daniel Calafut,Christopher Boguslaw Kocon,Steven Sapp,Dean E. Probst,Nathan Kraft,Thomas E. Grebs,Rodney S. Ridley,Gary M. Dolny,Bruce D. Marchant,Joseph A. Yedinak +10 more
TL;DR: In this paper, a gate electrode is disposed in the gate trench over but insulated from the at least one conductive shield electrode, and a gate dielectric layer is formed such that it flares out and extends directly under the body region.