B
Bernhard Wunderle
Researcher at Chemnitz University of Technology
Publications - 309
Citations - 2673
Bernhard Wunderle is an academic researcher from Chemnitz University of Technology. The author has contributed to research in topics: Delamination & Temperature cycling. The author has an hindex of 20, co-authored 272 publications receiving 2337 citations. Previous affiliations of Bernhard Wunderle include Fraunhofer Society.
Papers
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Journal ArticleDOI
Interlayer cooling potential in vertically integrated packages
Thomas Brunschwiler,Bruno Michel,Hugo E. Rothuizen,Urs Kloter,Bernhard Wunderle,Hermann Oppermann,Herbert Reichl +6 more
TL;DR: In this paper, the heat-removal capability of area-interconnect-compatible interlayer cooling in vertically integrated, high-performance chip stacks was characterized with de-ionized water as coolant.
Proceedings ArticleDOI
Forced convective interlayer cooling in vertically integrated packages
Thomas Brunschwiler,Bruno Michel,Hugo E. Rothuizen,Urs Kloter,Bernhard Wunderle,Hermann Oppermann,Herbert Reichl +6 more
TL;DR: In this article, the heat removal capability of area-interconnect-compatible interlayer cooling in vertically integrated, high-performance chip stacks was characterized with de-ionized water as coolant.
Proceedings ArticleDOI
Through silicon via technology — processes and reliability for wafer-level 3D system integration
Peter Ramm,M. J. Wolf,Armin Klumpp,Robert Wieland,Bernhard Wunderle,Bruno Michel,Herbert Reichl +6 more
TL;DR: The ICV-SLID fabrication process is well suited for the cost-effective production of both, high-performance applications (e.g. 3D microprocessor) and highly miniaturized multi-functional systems as mentioned in this paper.
Proceedings ArticleDOI
High aspect ratio TSV copper filling with different seed layers
M. J. Wolf,T. Dretschkow,Bernhard Wunderle,N. Jurgensen,G. Engelmann,Oswin Ehrmann,Albrecht Uhlig,Bruno Michel,Herbert Reichl +8 more
TL;DR: In this paper, through silicon via (TSV) filling using electrochemical deposition (ECD) of copper was discussed with respect to via diameter and via depth, and the impact of seed layer nature on filling ratio and void formation was discussed.
Journal ArticleDOI
Thermo-Mechanical Reliability of 3D-integrated Microstructures in Stacked Silicon
Bernhard Wunderle,R. Mrossko,O. Wittler,Eberhard Kaulfersch,Peter Ramm,Bruno Michel,Herbert Reichl +6 more
TL;DR: In this article, the authors investigated the thermo-mechanical reliability of inter-chip-vias for 3D chip stacking after processing and under external thermal loads relevant for the envisaged field of application (mobile, automotive) by Finite Element simulation.