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Changgan Zeng
Researcher at University of Science and Technology of China
Publications - 110
Citations - 4129
Changgan Zeng is an academic researcher from University of Science and Technology of China. The author has contributed to research in topics: Graphene & Scanning tunneling microscope. The author has an hindex of 32, co-authored 102 publications receiving 3322 citations. Previous affiliations of Changgan Zeng include Oak Ridge National Laboratory & University of Tennessee.
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Journal ArticleDOI
Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures
Kenan Zhang,Tianning Zhang,Guanghui Cheng,Tianxin Li,Shuxia Wang,Wei Wei,Xiaohao Zhou,Weiwei Yu,Yan Sun,Peng Wang,Dong Zhang,Changgan Zeng,Xingjun Wang,Weida Hu,Hong Jin Fan,Guozhen Shen,Xin Chen,Xiangfeng Duan,Kai Chang,Kai Chang,Ning Dai,Ning Dai +21 more
TL;DR: The creation of type-II staggered band alignment in MoTe2/MoS2 van der Waals (vdW) heterostructures with strong interlayer coupling could improve the fundamental understanding of the essential physics behind vdW heterostructure and help the design of next-generation infrared optoelectronics.
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Low-temperature growth of graphene by chemical vapor deposition using solid and liquid carbon sources.
Zhancheng Li,Ping Wu,Chenxi Wang,Xiaodong Fan,Wenhua Zhang,Xiaofang Zhai,Changgan Zeng,Zhenyu Li,Jinlong Yang,Jianguo Hou +9 more
TL;DR: A revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks, and the successful low-temperature growth can be qualitatively understood from the first principles calculations.
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Flatbands and Emergent Ferromagnetic Ordering in Fe 3 Sn 2 Kagome Lattices
Zhiyong Lin,Jin-Ho Choi,Qiang Zhang,Wei Qin,Seho Yi,Pengdong Wang,Lin Li,Yi-Fan Wang,Hui Zhang,Zhe Sun,Laiming Wei,Shengbai Zhang,Shengbai Zhang,Tengfei Guo,Tengfei Guo,Tengfei Guo,Qingyou Lu,Qingyou Lu,Qingyou Lu,Jun-Hyung Cho,Jun-Hyung Cho,Changgan Zeng,Zhenyu Zhang +22 more
TL;DR: The first experimental observation of a striking flatband near the Fermi level in the layered Fe_{3}Sn_{2} crystal consisting of two Fe kagome lattices separated by a Sn spacing layer is presented.
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Gate-tunable third-order nonlinear optical response of massless Dirac fermions in graphene
Tao Jiang,Di Huang,Jinluo Cheng,Xiaodong Fan,Zhihong Zhang,Yuwei Shan,Yangfan Yi,Yunyun Dai,Lei Shi,Kaihui Liu,Changgan Zeng,Jian Zi,John E. Sipe,Y. R. Shen,Y. R. Shen,Wei-Tao Liu,Shiwei Wu +16 more
TL;DR: In this paper, an experimental study of third-order optical nonlinearity of Graphene was conducted using gate tuning to adjust the doping level and vary the resonant condition.
Journal ArticleDOI
Linear magnetization dependence of the intrinsic anomalous Hall effect.
TL;DR: The intrinsic anomalous Hall conductivity depends linearly on the magnetization, which can be understood from the long-wavelength fluctuations of the spin orientation at finite temperatures.