C
Clément Hébert
Researcher at Spanish National Research Council
Publications - 34
Citations - 1002
Clément Hébert is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Diamond & Microelectrode. The author has an hindex of 15, co-authored 31 publications receiving 778 citations. Previous affiliations of Clément Hébert include Joseph Fourier University & Autonomous University of Barcelona.
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Journal ArticleDOI
Graphene in the Design and Engineering of Next-Generation Neural Interfaces
TL;DR: Graphene and 2D materials can indeed play a commanding role in the efforts toward wider clinical adoption of bioelectronics and electroceuticals.
Journal ArticleDOI
3D-nanostructured boron-doped diamond for microelectrode array neural interfacing.
Gaëlle Piret,Gaëlle Piret,Clément Hébert,Jean-Paul Mazellier,Lionel Rousseau,Emmanuel Scorsone,Myline Cottance,Gaelle Lissorgues,Marc Olivier Heuschkel,Serge Picaud,Philippe Bergonzo,Blaise Yvert,Blaise Yvert +12 more
TL;DR: 3D-nanostructured boron doped diamond (BDD), an innovative material consisting in a chemically stable material with a high aspect ratio structure obtained by encapsulation of a carbon nanotube template within two BDD nanolayers, allows neural cell attachment, survival and neurite extension.
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High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors.
Eduard Masvidal-Codina,Xavi Illa,Miguel Dasilva,Andrea Bonaccini Calia,Tanja Dragojević,Ernesto E. Vidal-Rosas,Elisabet Prats-Alfonso,Javier Martínez-Aguilar,Jose Manuel de la Cruz,Ramon Garcia-Cortadella,Philippe Godignon,Gemma Rius,Alessandra Camassa,Elena del Corro,Jessica Bousquet,Clément Hébert,Turgut Durduran,Turgut Durduran,Rosa Villa,Maria V. Sanchez-Vives,Maria V. Sanchez-Vives,Jose A. Garrido,Jose A. Garrido,Anton Guimerà-Brunet +23 more
TL;DR: This work uses flexible epicortical and intracortical arrays of graphene solution-gated field-effect transistors (gSGFETs) to map cortical spreading depression in rats and demonstrates that gSGFETS are able to record, with high fidelity, infraslow signals together with signals in the typical local field potential bandwidth.
Journal ArticleDOI
Flexible Graphene Solution-Gated Field-Effect Transistors: Efficient Transducers for Micro-Electrocorticography
Clément Hébert,Eduard Masvidal-Codina,Alejandro Suarez‐Perez,Andrea Bonaccini Calia,Gaëlle Piret,Ramon Garcia-Cortadella,Xavi Illa,Elena Garcia,José Morales Sánchez,Damia Viana Casals,Elisabet Prats-Alfonso,Jessica Bousquet,Philippe Godignon,Blaise Yvert,Rosa Villa,Maria V. Sanchez-Vives,Anton Guimerà-Brunet,Jose A. Garrido +17 more
TL;DR: In this article, the operation of solution-gated field-effect transistors (SGFETs) and characterizing their performance in saline solution were discussed and compared with the performance of state-of-the-art neural technologies.
Journal ArticleDOI
Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3ω-Völklein method
Aurélien Sikora,Hossein Ftouni,Jacques Richard,Clément Hébert,David Eon,Franck Omnès,Olivier Bourgeois +6 more
TL;DR: The method has been applied to measure thermal properties of low stress silicon nitride and polycrystalline diamond membranes with thickness ranging from 100 nm to 400 nm and support a significant grain size effect on the thermal transport.