D
Deirdre L. Olynick
Researcher at Lawrence Berkeley National Laboratory
Publications - 99
Citations - 3470
Deirdre L. Olynick is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Lithography & Resist. The author has an hindex of 28, co-authored 99 publications receiving 3304 citations. Previous affiliations of Deirdre L. Olynick include University of California, Los Angeles & University of California.
Papers
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Proceedings ArticleDOI
Formation of nanoscale structures by inductively coupled plasma etching
Colin Welch,Deirdre L. Olynick,Zuwei Liu,Anders Holmberg,Christophe Peroz,Alex P. G. Robinson,M. David Henry,Axel Scherer,Thomas Mollenhauer,Vince Genova,Doris K. T. Ng +10 more
TL;DR: In this article, the authors reviewed the top-down technique of ICP etching for the formation of nanometer scale structures and discussed the increased difficulties of nanoscale etching.
Journal ArticleDOI
Device fabrication and transport measurements of FinFETs built with 28Si SOI wafers towards donor qubits in silicon
Cheuk Chi Lo,Cheuk Chi Lo,Arun Persaud,Scott Dhuey,Deirdre L. Olynick,Ferenc Borondics,Michael C. Martin,Hans A. Bechtel,Jeffrey Bokor,Jeffrey Bokor,Thomas Schenkel +10 more
TL;DR: In this article, the authors report fabrication of transistors in a FinFET geometry using isotopically purified silicon-28-on-insulator (28-SOI) substrates.
Proceedings ArticleDOI
Static EUV micro-exposures using the ETS Set-2 optics
Patrick P. Naulleau,Kenneth A. Goldberg,Erik H. Anderson,Jeffrey Bokor,Jeffrey Bokor,Bruce Harteneck,Keith H. Jackson,Deirdre L. Olynick,Farhad Salmassi,Sherry L. Baker,Paul B. Mirkarimi,Eberhard Spiller,Christopher C. Walton,Donna J. O'Connell,Pei-yang Yan,Guojing Zhang +15 more
TL;DR: In this paper, a static microfield exposure system has been used to characterize a 4-mirror optical system designed for the EUV Engineering Test Stand (ETS) prototype stepper.
Journal ArticleDOI
Sub-20 nm laser ablation for lithographic dry development
Dimas G. de Oteyza,Pradeep N. Perera,M Schmidt,M Falch,Scott Dhuey,Bruce Harteneck,Adam M. Schwartzberg,P. J. Schuck,Stefano Cabrini,Deirdre L. Olynick +9 more
TL;DR: A new dry process is reported which combines high resolution resist exposure with selective laser ablation to achieve high resolution with high aspect ratios and demonstrates superior negative tone wet development by combining electron beam exposure with subsequent laser exposure at a non-ablative threshold.
Book ChapterDOI
Mainstreaming inorganic metal-oxide resists for high-resolution lithography
TL;DR: In this article, metal-oxide resists by focusing on two materials (hydrogen silsesquioxane (HSQ) and hafnium peroxide sulfate (HafSOx) are discussed.