D
Dirch Hjorth Petersen
Researcher at Technical University of Denmark
Publications - 132
Citations - 2636
Dirch Hjorth Petersen is an academic researcher from Technical University of Denmark. The author has contributed to research in topics: Sheet resistance & Graphene. The author has an hindex of 28, co-authored 127 publications receiving 2300 citations. Previous affiliations of Dirch Hjorth Petersen include University of Copenhagen & Koç University.
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Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition
Benjamin Vincent,Federica Gencarelli,Hugo Bender,Clement Merckling,Bastien Douhard,Dirch Hjorth Petersen,Ole Hansen,Henrik Hartmann Henrichsen,Johan Meersschaut,Wilfried Vandervorst,Marc Heyns,Roger Loo,Matty Caymax +12 more
TL;DR: In this paper, an atmospheric pressure-chemical vapor deposition technique was proposed to grow metastable GeSn epitaxial layers on Ge substrates with Sn contents up to 8% and those metastable layers stay fully strained after 30min anneal in N2 at 500°C; Ge-Sn interdiffusion is seen at 500 °C but not at lower temperature.
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Graphene Conductance Uniformity Mapping
Jonas Christian Due Buron,Dirch Hjorth Petersen,Peter Bøggild,David G. Cooke,Michael Hilke,Jie Sun,Eric Whiteway,Peter Folmer Nielsen,Ole Hansen,August Yurgens,Peter Uhd Jepsen +10 more
TL;DR: The combination of M4PP and THz-TDS conductance measurements reveals that the film is electrically continuous on the nanoscopic scale with microscopic defects likely originating from the transfer process, dominating the microscale conductance of the investigated graphene film.
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Reversible hysteresis inversion in MoS2 field effect transistors
Naveen Kaushik,David M. A. Mackenzie,Kartikey Thakar,Natasha Goyal,Bablu Mukherjee,Peter Bøggild,Dirch Hjorth Petersen,Saurabh Lodha +7 more
TL;DR: In this paper, two independent mechanisms responsible for thermally assisted hysteresis inversion in gate transfer characteristics of contact resistance-independent multilayer MoS2 transistors are delineated.
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Mapping the electrical properties of large-area graphene
Peter Bøggild,David M. A. Mackenzie,Patrick Rebsdorf Whelan,Dirch Hjorth Petersen,Jonas Christian Due Buron,Amaia Zurutuza,John Gallop,Ling Hao,Peter Uhd Jepsen +8 more
TL;DR: In this article, the authors provide a comprehensive overview of the issues that need to be addressed by any large-area characterisation method for electrical key performance indicators, with emphasis on electrical uniformity and on how this can be used to provide a more accurate analysis of the graphene film.
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Graphene mobility mapping
Jonas Christian Due Buron,Filippo Pizzocchero,Peter Uhd Jepsen,Dirch Hjorth Petersen,José M. Caridad,Bjarke Sørensen Jessen,Timothy J. Booth,Peter Bøggild +7 more
TL;DR: Unexpectedly, significant variations in mobility rather than doping are the cause of large conductance inhomogeneities, highlighting the importance of statistical approaches when assessing large-area graphene transport properties.