N
Natasha Goyal
Researcher at Indian Institute of Technology Bombay
Publications - 8
Citations - 200
Natasha Goyal is an academic researcher from Indian Institute of Technology Bombay. The author has contributed to research in topics: Field-effect transistor & Transmission electron microscopy. The author has an hindex of 5, co-authored 7 publications receiving 140 citations.
Papers
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Journal ArticleDOI
Reversible hysteresis inversion in MoS2 field effect transistors
Naveen Kaushik,David M. A. Mackenzie,Kartikey Thakar,Natasha Goyal,Bablu Mukherjee,Peter Bøggild,Dirch Hjorth Petersen,Saurabh Lodha +7 more
TL;DR: In this paper, two independent mechanisms responsible for thermally assisted hysteresis inversion in gate transfer characteristics of contact resistance-independent multilayer MoS2 transistors are delineated.
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Enhanced stability and performance of few-layer black phosphorus transistors by electron beam irradiation.
TL;DR: An improvement in the on-current and carrier mobility (μ) along with a decrease in threshold voltage (Vth) on exposure to an e-beam with 15 keV energy for 80 seconds is observed for BP-FETs.
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Phase engineering of seamless heterophase homojunctions with co-existing 3R and 2H phases in WS2 monolayers
Pawan Kumar,Navneet Chandra Verma,Natasha Goyal,Jayeeta Biswas,Saurabh Lodha,Chayan K. Nandi,Viswanath Balakrishnan +6 more
TL;DR: The investigated aspects of the controlled in plane growth of coexisting phases with seamless homojunctions, their properties, and their thermal stability will enable the development of nanoscale devices that are free from issues of lattice mismatch and grain boundaries.
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Accurate Threshold Voltage Reliability Evaluation of Thin Al2O3 Top-Gated Dielectric Black Phosphorous FETs Using Ultrafast Measurement Pulses.
TL;DR: It is shown that the top-gated Al2O3 BP-FETs with scaled gate oxide thickness can match state-of-the-art Si reliability specifications at operating voltage and room/elevated temperature.
Journal ArticleDOI
Enhanced thermally aided memory performance using few-layer ReS 2 transistors
Natasha Goyal,David M. A. Mackenzie,Vishal Panchal,Himani Jawa,Olga Kazakova,Dirch Hjorth Petersen,Saurabh Lodha +6 more
TL;DR: In this article, the performance of a few-layer ReS 2 and MoS 2 back gate field effect transistors (FETs) is compared for memory applications, showing that small operating temperature and voltage along with larger READ and RESET-to-WRITE windows make a better choice for thermally aided memory applications.