Dong Myong Kim

TL;DR: In this article, the effects of both the separation between two partially insulated oxide layers (LPiOX) and the thickness of a partial insulated oxide layer (TPiOX), on the short channel effect and the intrinsic propagation delay in partially insulated field-effect transistors (PiFETs) were investigated by using technology computer-aided design (TCAD) device simulation.

TL;DR: In this paper , a floating-gate (FG) node and an amorphous InGaZnO (IGZO) channel layer were proposed to emulate the neuroplasticity functions of both short-term memory (STM) and long-term attention (LTM) through the control of the amplitude and the number of input pulses.

TL;DR: In this paper , the degradation mechanism of bottom-gate InGaZnO thin-film transistors (IGZO TFTs) under current stress (CS) was analyzed.

TL;DR: In this article, an analytical current and capacitance model for amorphous Indium-Gallium-Zinc-Oxide Thin film transistors (a-IGZO TFTs) is proposed for application to the simulation of a -IGZo TFT-based circuits, which is used both for the optimization of fabrication process and for the prospective estimation of the effect of process conditions on the circuit performance.

TL;DR: In this article , the authors proposed a technique for characterization of interface traps in silicon gate-all-around (GAA) nanosheet (NS) MOSFETs.