Dong Myong Kim

TL;DR: In this paper, a double heterojunction bipolar transistor (DHBT)-based capacitorless one-transistor (1T) DRAM cell employing a narrow bandgap SiGe body and Si/SiGe Heterojunction for a possible next-generation DRAM cells was proposed.

TL;DR: In this article, a gate-all-around (GAA) silicon nanosheet (SiNS) metal-oxide-semiconductor field effect transistor (MOSFET) was fabricated and evaluated for electrostatic characteristics and short-channel effects.

TL;DR: In this paper, a decomposition of positive gate bias temperature stress (PBTS)-induced instability into contributions of distinct mechanisms is experimentally demonstrated at several temperatures in top-gate self-aligned coplanar amorphous InGaZnO thin-film transistors by combining the stress-time-divided measurements and the subgap density-of-states (DOS) extraction.

TL;DR: In order to achieve high mobility devices, various types of metal oxide semiconductors have been extensively studied, including the most popular In-Ga-Zn-O, with typical field effect mobilities ranging between 10 to 30 cm2/Vs as discussed by the authors.

TL;DR: In this article, a two-terminal parallel-mode C-V technique was proposed to separate the source and drain resistances of amorphous indium-gallium-zinc oxide (a-IGZO) transistors.