다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

https://iopscience.iop.org/article/10.1088/1468-6996/11/4/044305/pdf

Present status of amorphous In–Ga–Zn–O thin-film transistors

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

We comparatively study the performance of flexible strain sensors based on carbon nanotube (CNT)-Polydimethylsiloxane (PDMS) nanocomposites with different concentrations of CNTs. The semiconducting CNTs with high intrinsic gauge factor were employed for the sensor fabrications. A percolation network with a lower CNT concentration shows higher resistance changes in response to applied strains compared to those network with a higher CNT concentration. However, from a stability point of view, a lower concentration percolation network shows much worse characteristics than does a higher concentration percolation network. For the analysis of our observations, a 2-D percolation-based numerical model based on the Monte Carlo method was employed to understand the electrical and coupled electromechanical behaviors of CNT-PDMS nanocomposite strain sensors.

Comparative study of piezoresistance effect of semiconducting carbon nanotube-Polydimethylsiloxane nanocomposite strain sensor

As the oxide TFT-oriented simulator, the subgap density of states- based amorphous oxide TFT simulator (DAOTS) is proposed, implemented, and demonstrated for a-InGaZnO TFTs. It consists of the parameters having their physical meanings. Moreover, concrete techniques for parameter extraction are supplied. Most preferably, the quantitative self-consistency with experimental data is guaranteed in DAOTS.

/pdf/p-204l-late-news-poster-subgap-density-of-states-based-3lj323xya4.pdf

P-204L: Late-News Poster: Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design

The extraction of acceptor-like subgap DOS (gA(E)) in a-InGaZnO and a-InHfZnO TFTs is demonstrated by using multi-frequency C- V technique. The DC performance and negative bias stress (NBS)- induced instability are compared in perspective of gA(E). The superior stability of a-InHfZnO TFT is deduced to be originated from donor-like DOS gD(E).

/pdf/p-205l-late-news-poster-comparison-between-a-ingazno-and-a-5cyx12vh1d.pdf

P‐205L: Late‐News Poster: Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

Comparative Study on Program/Erase E ciency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET So Ra Park, Kwan Young Kim, Changmin Choi, Kwan-Jae Song, Jun-Hyun Park, Kichan Jeon, Sunyeong Lee, Tae Yoon Kim, Ji Eun Lee, Sangwon Lee, Sungwook Park, Jaeman Jang, Dong Myong Kim and Dae Hwan Kim School of Electrical Engineering, Kookmin University, Seoul 136-702 (Received 20 February 2008) The comparative study on Program/Erase (P/E) e ciency of three-dimensional (3-D) SONOS memory cell transistors is performed by comparing Double Gate (DG), FinFET with Gate All Around (GAA) structures. GAA-CAT is superior to DG-CAT and/or Fin-CAT in terms of all of P/E e ciency, low voltage operation and the integration density. It is shown that this superiority results from the higher FN current in P/E condition (due to the Eeld concentration e ect) rather than the gate controllability in a read operation condition. Furthermore, as DSi decreases, the superiority of GAA-CAT becomes more prominent due to the feature of the Eeld concentration e ect. It is shown that GAA-CAT is very promising candidate for a low voltage P/E e cient ash memory cell transistor. Remaining or further challenging issues will be the body bias control and the scheme for an erasure in block units. In terms of the retention properties, both GAA-CAT and DG-CAT show the superior retention to Fin-CAT due to the corner e ect of Fin-CAT. In the case of Fin-CAT, the maximum Eeld is higher by 1.5 times than that of GAA-CAT and retention characteristic of Fin-CAT is inferior to those of GAA-CAT and DG-CAT by about three orders of magnitude. PACS numbers: 85.30.De, 85.30.Tv

Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET

Dong Myong Kim

Papers

Comparative study of piezoresistance effect of semiconducting carbon nanotube-Polydimethylsiloxane nanocomposite strain sensor

P-204L: Late-News Poster: Subgap Density of States-Based Amorphous Oxide Thin Film Transistor Simulator (DAOTS) for Process Optimization and Circuit Design

P‐205L: Late‐News Poster: Comparison between a‐InGaZnO and a‐InHfZnO TFTs in Perspective of Subgap Density of States (DOS) in Active Film

Comparative Study on Program/Erase Efficiency and Retention Properties of 3-D SONOS Flash Memory Cell Array Transistors: Structural Approach from Double-Gate FET and FinFET to Gate-All-Around FET

Sub-bandgap photonic base current method for characterization of interface states at heterointerfaces in heterojunction bipolar transistors