D
Dong Myong Kim
Researcher at Kookmin University
Publications - 233
Citations - 4036
Dong Myong Kim is an academic researcher from Kookmin University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 25, co-authored 216 publications receiving 3378 citations.
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Proceedings ArticleDOI
Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory
Bongsik Choi,Sang Hyun Jang,Jinsu Yoon,Juhee Lee,Minsu Jeon,Yongwoo Lee,Jungmin Han,Jieun Lee,Dong Myong Kim,Dae Hwan Kim,Chan Lim,Sungkye Park,Sung-Jin Choi +12 more
TL;DR: It is suggested that the program and erase levels should be balanced and optimized to reduce the early retention in tube-type 2y word-line stacked 3-D NAND flash memory.
Journal ArticleDOI
Extraction of Density of States in Amorphous GaInZnO Thin-Film Transistors by Combining an Optical Charge Pumping and Capacitance–Voltage Characteristics
Jun-Hyun Park,Kichan Jeon,Sangwon Lee,Sunil Kim,Sang-Wook Kim,Ihun Song,Chang Jung Kim,Jae-Chul Park,Youngsoo Park,Dong Myong Kim,Dae Hwan Kim +10 more
TL;DR: In this article, the acceptor-like density of states (DOS) of n-channel amorphous GaInZnO (a-GIZO) thin-film transistors based on the combination of subbandgap optical charge pumping and C-V characteristics is proposed.
Journal ArticleDOI
Modeling and characterization of metal-semiconductor-metal-based source-drain contacts in amorphous InGaZnO thin film transistors
Sangwon Lee,Jun-Hyun Park,Kichan Jeon,Sungchul Kim,Yongwoo Jeon,Dae Hwan Kim,Dong Myong Kim,Jae Chul Park,Chang Jung Kim +8 more
TL;DR: In this paper, a physics-based semi-empirical model for the currentvoltage characteristics of the MSM structure for the source-channel-drain contact in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is proposed and verified with experimental results.
Journal ArticleDOI
Amorphous InGaZnO Thin-Film Transistors—Part II: Modeling and Simulation of Negative Bias Illumination Stress-Induced Instability
Yongsik Kim,Sungchul Kim,Woojoon Kim,Minkyung Bae,Hyun Kwang Jeong,Dongsik Kong,Sunwoong Choi,Dong Myong Kim,Dae Hwan Kim +8 more
TL;DR: In this article, a quantitative investigation of mechanisms on the negative bias illumination stress (NBIS)-induced threshold voltage instability of amorphous InGaZnO (a-IGZO) thin-film transistors is presented.
Journal ArticleDOI
Differential Ideality Factor Technique for Extraction of Subgap Density of States in Amorphous InGaZnO Thin-Film Transistors
Minkyung Bae,Daeyoun Yun,Yongsik Kim,Dongsik Kong,Hyun Kwang Jeong,Woojoon Kim,Jaehyeong Kim,Inseok Hur,Dae Hwan Kim,Dong Myong Kim +9 more
TL;DR: In this paper, a differential ideality factor technique (DIFT) was proposed to extract subgap density of states (DOS) over the bandgap in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs).