Dong Myong Kim

TL;DR: In this paper, various memristor-based synaptic devices have been proposed for implementing a neuromorphic system, but they typically suffer from various inherent problems such as nonlinearity a...

TL;DR: Based on the photonic highfrequency capacitance-voltage response of MOS capacitors and the conventional sub-threshold current method, an improved characterization method is reported for the analysis of interface-states in MOS systems in this article.

TL;DR: It is confirmed by 2-D technology computer-aided design simulation that the proposed NVM cell with channel length L = 50 nm operates with enough sensing margin and high-density NVM by the crossed cell array architecture.

TL;DR: In this paper, the authors investigated the instability mechanism of amorphous InGaZnO thin-film transistors under negative bias stress (NBS) and found that the dominant mechanism of NBS-induced instability was not a change in the subgap density-of-states (DOS), but a reduction in the parasitic resistance caused by reduced Schottky barrier of the metal contacts.

TL;DR: In this article , negative bias illumination stress (NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zincoxide (a-IGZO) thin-film transistor (TFT) devices were investigated.