Dong Myong Kim

TL;DR: The concept of activation energy window (AEW) is introduced to explain the occurrence of PPC effects by photoinduced electron doping, which is likely to be associated with the formation of peroxides in the semiconductor.

TL;DR: In this paper, the authors proposed the Subgap Density of states (DOS)-based Amorphous Oxide TFT Simulator (DeAOTS) for amorphous indium-gallium-zincoxide (a-IGZO) TFTs.

TL;DR: In this article, the effect of O2 flow rate during channel deposition is investigated on the electrical instability of the amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) under positive gate bias stresses.

TL;DR: In this article, a combination of the multifrequency C-V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range (EV ≤ E ≤ EC) including the interface trap density between the gate oxide and the active layer.

TL;DR: This study demonstrates a hybrid biosensor comprised of a silicon nanowire (SiNW) integrated with an amplifier MOSFET to improve the current response of field-effect-transistor (FET)-based biosensors.