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Dong Myong Kim

Researcher at Kookmin University

Publications -  233
Citations -  4036

Dong Myong Kim is an academic researcher from Kookmin University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 25, co-authored 216 publications receiving 3378 citations.

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Sub-bandgap optical subthreshold current spectroscopy for extracting energy distribution of interface states in nitride-based charge trap flash memories

TL;DR: In this article, a sub-bandgap optical subthreshold current spectroscopy (OSCS) was proposed for extracting the energy distribution of interface trap density (Dit) in nitride-based charge trap flash (CTF) memory devices.
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Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors

TL;DR: In this paper, a sub-bandgap photonic capacitance-voltage method (PCVM) is proposed for the energy distribution of interface traps at the SiO2/low temperature poly-silicon (LTPS) junction interface in LTPS thin-film transistors.
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Design of fourth-order ΔΣ modulator for the D/A conversion of audio signals ☆

TL;DR: An efficient circuit technique to minimize the hardware consumption for a digital fourth-order single loop ΔΣ modulator that employs a simple bit-shifting and the ROM selection scheme for multiplications and the new buffer-and-routing ROM structure is described.
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Effect of Anion Composition on the Bias Stress Stability in Zn-O-N Thin-Film Transistors

TL;DR: In this article, the effects of negative and positive bias stability with respect to the anion composition of Zn-O-N thin-film transistors were investigated, and the negative bias stress test results showed that the threshold voltage shift was high for ZnON devices with high nitrogen composition.
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Extraction Technique for Flat Band Voltage Using Multi-Frequency C – V Characteristics in Amorphous InGaZnO Thin-Film-Transistors

TL;DR: The proposed physical-based technique showed better accuracy and compatibility with amorphous oxide semiconductor (AOS) TFTs compared with classical empirically based methods.