다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

https://iopscience.iop.org/article/10.1088/1468-6996/11/4/044305/pdf

Present status of amorphous In–Ga–Zn–O thin-film transistors

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

An object of the present invention is to decrease the resistance of a power supply line, to suppress a voltage drop in the power supply line, and to prevent defective display. A connection terminal portion includes a plurality of connection terminals. The plurality of connection terminals is provided with a plurality of connection pads which is part of the connection terminal. The plurality of connection pads includes a first connection pad and a second connection pad having a line width different from that of the first connection pad. Pitches between the plurality of connection pads are equal to each other.

Semiconductor device and display device

Efficient and Large-Current-Output Boosted Voltage Generators with Non-Overlapping-Clock-Driven Auxiliary Pumps for Sub-1-V Memory Applications

We report a hybrid technique for extraction of structure- and gate-bias-dependent parasitic source/drain (S/D) resistances (RS and RD) in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) In the proposed technique, C- V and I -V measurements are combined for modeling and extraction As structural dependence, the active-layer thickness TIGZO , the gate length L, and the overlap length Lov between the S/D and the gate are considered in the equivalent circuit for parasitic resistances We also separated the horizontal component RH considering the transfer resistance RLT depending on the transfer length LT and the channel resistance RCH, as well as the vertical components in the S/D RVS and RVD We confirmed the proposed technique through a separate extraction of VGS -independent contact resistances (RCS, RCD) from the channel length- and VGS-dependent RLT and RCH

Hybrid $C$ – $V$ and $I$ – $V$ Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs

Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

Physical unclonable functions (PUFs) based on 99% semiconducting carbon nanotube (CNT) network transistors are demonstrated. We experimentally verified the possibilities of a PUF based on the CNT network transistors with the unpredictable and high randomness of the CNT-percolated network. The Hamming distance (HD) and Hamming weight (HW), which are important PUF parameters, were calculated to evaluate the uniqueness and assess the uniformity of the CNT-based PUF devices.

Carbon Nanotube Network Transistor for a Physical Unclonable Functions-based Security Device

In this study, we investigate the effect of rising time (TR) of liquid gate bias (VLG) on transient responses in pH sensors based on Si nanowire ion-sensitive field-effect transistors (ISFETs). As TR becomes shorter and pH values decrease, the ISFET current takes a longer time to saturate to the pH-dependent steady-state value. By correlating VLG with the internal gate-to-source voltage of the ISFET, we found that this effect occurs when the drift/diffusion of mobile ions in analytes in response to VLG is delayed. This gives us useful insight on the design of ISFET-based point-of-care circuits and systems, particularly with respect to determining an appropriate rising time for the liquid gate bias.

Dong Myong Kim

Papers

Efficient and Large-Current-Output Boosted Voltage Generators with Non-Overlapping-Clock-Driven Auxiliary Pumps for Sub-1-V Memory Applications

Hybrid $C$ – $V$ and $I$ – $V$ Technique for Separate Extraction of Structure- and Bias-Dependent Parasitic Resistances in a-InGaZnO TFTs

Photonic characterization of capacitance-voltage characteristics in MOS capacitors and current-voltage characteristics in MOSFETs

Carbon Nanotube Network Transistor for a Physical Unclonable Functions-based Security Device

Effect of liquid gate bias rising time in pH sensors based on Si nanowire ion sensitive field effect transistors