D
Dong Myong Kim
Researcher at Kookmin University
Publications - 233
Citations - 4036
Dong Myong Kim is an academic researcher from Kookmin University. The author has contributed to research in topics: Thin-film transistor & Threshold voltage. The author has an hindex of 25, co-authored 216 publications receiving 3378 citations.
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Journal ArticleDOI
Characterization of Density-of-States in Polymer-based Organic Thin Film Transistors and Implementation into TCAD Simulator
Jaehyeong Kim,Jaeman Jang,Minkyung Bae,Jae-Wook Lee,Woojoon Kim,Inseok Hur,Hyun Kwang Jeong,Dong Myong Kim,Dae Hwan Kim +8 more
TL;DR: In this article, a Schottky contact model for the source and drain was employed to reproduce the nonlinearity in the output characteristics of the density-of-states (DOS) of polyamide thin-film transistors.
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Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System
Dongyeon Kang,Jun Tae Jang,Shinyoung Park,Md. Hasan Raza Ansari,Jong-Ho Bae,Sung-Jin Choi,Dong Myong Kim,Changwook Kim,Seongjae Cho,Dae Hwan Kim +9 more
TL;DR: In this paper, a novel synaptic transistor constructing the neuromorphic system is proposed, fabricated, and characterized, and the insight into the substantial effect of optimal device structure design on energy efficiency is highlighted.
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LRS retention fail based on joule heating effect in InGaZnO resistive-switching random access memory
TL;DR: In this paper, the low-resistance state retention fail of InGaZnO resistive-switching random access memory (ReRAM) under constant DC bias stress conditions by Joule heating effect was reported.
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Analysis of Instability Mechanism under Simultaneous Positive Gate and Drain Bias Stress in Self-Aligned Top-Gate Amorphous Indium-Zinc-Oxide Thin-Film Transistors
Jonghwa Kim,Sungju Choi,Jaeman Jang,Jun Tae Jang,Jungmok Kim,Sung-Jin Choi,Dong Myong Kim,Dae Hwan Kim +7 more
TL;DR: In this article, the authors quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zincoxide thin-film transistors.
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Influence of Nitrogen Content on Persistent Photoconductivity in Zinc Oxynitride Thin Film Transistors
TL;DR: In this paper, the influence of anion composition on the photoresponse characteristics of zinc oxynitride thin film transistors is investigated and compared directly to conventional In-Ga-Zn-O TFTs.