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Eric Beyne

Researcher at Katholieke Universiteit Leuven

Publications -  664
Citations -  10608

Eric Beyne is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Wafer & Die (integrated circuit). The author has an hindex of 44, co-authored 626 publications receiving 9619 citations. Previous affiliations of Eric Beyne include IMEC & Siemens.

Papers
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Proceedings ArticleDOI

Inductive Links for 3D Stacked Chip-to-Chip Communication

TL;DR: This paper focusses on an experimental inductive link study based on S-parameter measurements up to 67 GHz for 3D stacked chip to chip communication, complemented by a calibrated HFSS model for coupling between two chips that is then extended to stacks with up to eight chips.
Book ChapterDOI

Interconnect and Packaging Technologies for Realizing Miniaturized Smart Devices

TL;DR: Multilayer thin film technology is proposed as a bridge- technology between the very high density IC technology and the coarse standard PCB technology, and is also a key enabling technology for the realization of true SiP solutions, combining multiple SoC IC's with other components and also integrating passive compon- ents in its layers.
Proceedings ArticleDOI

3D-SoC integration utilizing high accuracy wafer level bonding

TL;DR: In this paper, the authors describe ultra-fine pitch 3D integration development using wafer level Cu/insulator hybrid bonding approach on 300mm substrate, and demonstrate and characterize vertical interconnects formed via face-to-face waferto-wafer (W2W) bonding.
Journal ArticleDOI

A Modified Electromigration Test Structure for Flip Chip Interconnections

TL;DR: In this article, a test structure for in-situ monitoring of electromigration in a flip chip connection is proposed, where small resistance changes at the cathodic and anodic sides can be mounted separately.
Proceedings ArticleDOI

Temporary wafer bonding defect impact assessment on substrate thinning: Process enhancement through systematic defect track down

TL;DR: In this paper, defects in the overall thinning process flow will become a major element of focus in the future and fundamental understanding of the potential defects and their impact on devices is therefore needed to minimize their recurrence.