E
Erya Deng
Researcher at Beihang University
Publications - 39
Citations - 1218
Erya Deng is an academic researcher from Beihang University. The author has contributed to research in topics: CMOS & Spin-transfer torque. The author has an hindex of 15, co-authored 37 publications receiving 889 citations. Previous affiliations of Erya Deng include Centre national de la recherche scientifique & Grenoble Institute of Technology.
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Perpendicular-anisotropy magnetic tunnel junction switched by spin-Hall-assisted spin-transfer torque
TL;DR: In this article, a spin-Hall-assisted spin-transfer torque (STT) was applied to a three-terminal device consisting of a perpendicular-anisotropy magnetic tunnel junction (MTJ) and an β-W strip.
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Low Power Magnetic Full-Adder Based on Spin Transfer Torque MRAM
TL;DR: In this article, a novel magnetic fulladder (MFA) design based on perpendicular magnetic anisotropy (PMA) STT-MRAM is presented, which provides power efficiency and die area compared with conventional CMOS-only full adder (FA).
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Compact Model of Dielectric Breakdown in Spin-Transfer Torque Magnetic Tunnel Junction
You Wang,Hao Cai,Lirida Alves de Barros Naviner,Yue Zhang,Xiaoxuan Zhao,Erya Deng,Jacques-Olivier Klein,Weisheng Zhao +7 more
TL;DR: In this paper, the physical mechanisms of time-dependent dielectric breakdown (TDDB) in an oxide barrier were analyzed and an SPICE-compact model of the MTJ was proposed.
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Synchronous Non-Volatile Logic Gate Design Based on Resistive Switching Memories
Weisheng Zhao,Mathieu Moreau,Erya Deng,Yue Zhang,Jean-Michel Portal,Jacques-Olivier Klein,Marc Bocquet,Hassen Aziza,Damien Deleruyelle,Christophe Muller,Damien Querlioz,Nesrine Ben Romdhane,Dafiné Ravelosona,Claude Chappert +13 more
TL;DR: A theoretical investigation of synchronous NV logic gates based on RS memories (RS-NVL) is presented and special design techniques and strategies are proposed to optimize the structure according to different resistive characteristics of NVMs.
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Compact model of magnetic tunnel junction with stochastic spin transfer torque switching for reliability analyses
You Wang,You Wang,Yue Zhang,Erya Deng,Jacques-Olivier Klein,Lirida Alves de Barros Naviner,Weisheng Zhao,Weisheng Zhao +7 more
TL;DR: A compact model of MTJ with STT stochastic behavior is proposed, in which technical variations and temperature evaluation are properly integrated and its accurate performances allow a more realistic reliability analysis involving the influences of ambient environment and technical process.