E
Euyhwan Park
Researcher at Seoul National University
Publications - 27
Citations - 128
Euyhwan Park is an academic researcher from Seoul National University. The author has contributed to research in topics: Light-emitting diode & Transistor. The author has an hindex of 5, co-authored 27 publications receiving 110 citations.
Papers
More filters
Journal ArticleDOI
Effects of Localized Body Doping on Switching Characteristics of Tunnel FET Inverters With Vertical Structures
Daewoong Kwon,Hyun Woo Kim,Jang Hyun Kim,Euyhwan Park,Junil Lee,Wandong Kim,Sangwan Kim,Jong-Ho Lee,Byung-Gook Park +8 more
TL;DR: In this article, the effects of localized body doping (LBD) on alternating current switching performances of tunnel FETs (TFETs) with vertical structures were simulated with the help of mixedmode device and circuit simulations.
Journal ArticleDOI
Schottky Barrier Tunnel Field-Effect Transistor using Spacer Technique
Hyun-Woo Kim,Jong Pil Kim,Sangwan Kim,Min-Chul Sun,Garam Kim,Jang Hyun Kim,Euyhwan Park,Hyungjin Kim,Byung-Gook Park +8 more
TL;DR: In order to overcome small current drivability of a tunneling field-effect transistor (TFET), a TFET using Schottky barrier (SBTFET) is proposed that has a metal source region unlike the conventional TFET and shows better on/off switching property than the control device.
Journal ArticleDOI
Tunneling field-effect transistor with Si/SiGe material for high current drivability
Hyun Woo Kim,Jang Hyun Kim,Sangwan Kim,Min-Chul Sun,Min-Chul Sun,Euyhwan Park,Byung-Gook Park +6 more
TL;DR: In this paper, a TFET with the SiGe body and elevated Si drain region was proposed to overcome the small current drivability of a tunneling field effect transistor (TFET).
Journal ArticleDOI
GaN-based light emitting diodes using p-type trench structure for improving internal quantum efficiency
TL;DR: In order to improve the internal quantum efficiency of GaN-based LEDs, a LED structure featuring a p-type trench in the multi-quantum well (MQW) is proposed in this paper.
Journal ArticleDOI
Analysis on temperature dependent current mechanism of tunnel field-effect transistors
Junil Lee,Daewoong Kwon,Hyun Woo Kim,Jang Hyun Kim,Euyhwan Park,Tae Hyung Park,Sihyun Kim,Ryoongbin Lee,Jong-Ho Lee,Byung-Gook Park +9 more
TL;DR: In this paper, the total drain current (I D) of a tunnel FET is decomposed into each current component with different origins to analyze the I D formation mechanisms of the TFET as a function of gate voltage (V GS).