A high-mobility two-dimensional electron gas at the spinel/perovskite interface of γ-Al2O3/SrTiO3.
Yunzhong Chen,Nicolas Bovet,Felix Trier,Dennis Christensen,Fanming Qu,Niels Hessel Andersen,Takeshi Kasama,Wei Zhang,R. Giraud,J. Dufouleur,Thomas Sand Jespersen,Jinghan Sun,Anders Smith,Jesper Nygård,Lanlu Lu,Bernd Büchner,B. G. Shen,Søren Linderoth,Nini Pryds +18 more
TLDR
The spinel/perovskiteTwo-dimensional electron gas, where the two-dimensional conduction character is revealed by quantum magnetoresistance oscillations, is found to result from interface-stabilized oxygen vacancies confined within a layer of 0.9 nm in proximity to the interface.Abstract:
Highly mobile electrons at the interface of two perovskite oxides are of considerable interest for electronic applications. In this work, the discovery of such an electron gas at the interface of a spinel and a perovskite oxide represents a new approach to look for oxide systems with enhanced properties.read more
Citations
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The 2016 oxide electronic materials and oxide interfaces roadmap
Michael Lorenz,M. S. Ramachandra Rao,Thirumalai Venkatesan,Elvira Fortunato,Pedro Barquinha,Rita Branquinho,Daniela Salgueiro,Rodrigo Martins,Emanuel Carlos,Ao Liu,Fukai Shan,Marius Grundmann,Hans Boschker,Joynarayan Mukherjee,M. Priyadarshini,Nandita DasGupta,D. J. Rogers,Ferechteh H. Teherani,E. V. Sandana,Philippe Bove,Kevin J. Rietwyk,Arie Zaban,A. Veziridis,Anke Weidenkaff,Miryala Muralidhar,Masato Murakami,Stefan Abel,Jean Fompeyrine,Jesús Zúñiga-Pérez,Ramamoorthy Ramesh,Nicola A. Spaldin,S. Ostanin,Vitaliy B. Borisov,Ingrid Mertig,Vera Lazenka,Gopalan Srinivasan,Wilfrid Prellier,Masaki Uchida,Masashi Kawasaki,Rossitza Pentcheva,Philipp Gegenwart,F. Miletto Granozio,Josep Fontcuberta,Nini Pryds +43 more
TL;DR: In this paper, the authors present a roadmap for oxide-based electronics with a focus on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide based devices.
Journal ArticleDOI
LaAlO 3 stoichiometry is key to electron liquid formation at LaAlO 3 /SrTiO 3 interfaces
Maitri Warusawithana,Christoph Richter,Christoph Richter,Julia A. Mundy,P. Roy,Jonathan Ludwig,S. Paetel,Tassilo Heeg,A.A. Pawlicki,Lena F. Kourkoutis,Mao Zheng,Minseong Lee,B. Mulcahy,Willi Zander,Ye Zhu,J. Schubert,James N. Eckstein,David A. Muller,C. Stephen Hellberg,Jochen Mannhart,D. G. Schlom +20 more
TL;DR: It is demonstrated, through experiments and first-principle calculations, that the cation stoichiometry of the nominal LaAlO3 layer is key to 2-DEL formation: only Al-rich LaAl O3 results in a 2- DEL.
Journal ArticleDOI
Physics of SrTiO$_3$-based heterostructures and nanostructures: a review
TL;DR: This review provides a summary of the rich physics expressed within SrTiO3-based heterostructure and nanostructures, including their phase diagram and coupling between the various degrees of freedom.
Journal ArticleDOI
Physics of SrTiO3-based heterostructures and nanostructures: a review.
TL;DR: In this paper, the authors provide a summary of the rich physics expressed within SrTiO3-based heterostructures and nanostructure, including their phase diagram and coupling between the various degrees of freedom.
Journal ArticleDOI
Two-Dimensional Electron Gases at Complex Oxide Interfaces
Susanne Stemmer,S. James Allen +1 more
TL;DR: In this article, the authors discuss routes to high-mobility 2DEGs in complex oxide heterostructures, with a particular focus on transport in SrTiO3.
References
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New Method for High-Accuracy Determination of the Fine-Structure Constant Based on Quantized Hall Resistance
TL;DR: In this article, the Hall voltage of a two-dimensional electron gas, realized with a silicon metal-oxide-semiconductor field effect transistor, was measured and it was shown that the Hall resistance at particular, experimentally well-defined surface carrier concentrations has fixed values which depend only on the fine-structure constant and speed of light, and is insensitive to the geometry of the device.
Journal ArticleDOI
A high-mobility electron gas at the LaAlO3/SrTiO3 heterointerface
TL;DR: A model interface is examined between two insulating perovskite oxides—LaAlO3 and SrTiO3—in which the termination layer at the interface is controlled on an atomic scale, presenting a broad opportunity to tailor low-dimensional charge states by atomically engineered oxide heteroepitaxy.
Journal ArticleDOI
Two-Dimensional Magnetotransport in the Extreme Quantum Limit
TL;DR: The formation of a Wigner solid or charge-density-wave state with triangular symmetry is suggested as a possible explanation for the formation of the Hall plateau in magnetotransport of high-mobility, two-dimensional electrons as mentioned in this paper.
Journal ArticleDOI
Superconducting Interfaces Between Insulating Oxides
Nicolas Reyren,Stefan Thiel,Andrea D. Caviglia,L. Fitting Kourkoutis,German Hammerl,Christoph Richter,Christof W. Schneider,Thilo Kopp,Anna-Sabina Ruetschi,Didier Jaccard,Marc Gabay,David A. Muller,Jean-Marc Triscone,Jochen Mannhart +13 more
TL;DR: This work reports on superconductivity in the electron gas formed at the interface between two insulating dielectric perovskite oxides, LaAlO3 and SrTiO3.
Book
Magnetic Oscillations in Metals
TL;DR: In this paper, the de Haas-van Alphen effect and other oscillatory effects are discussed, including phase and spin-splitting effects, and the Dingle temperature is discussed.