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Franz Kreupl

Researcher at Technische Universität München

Publications -  269
Citations -  6240

Franz Kreupl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Carbon nanotube & Layer (electronics). The author has an hindex of 40, co-authored 269 publications receiving 5986 citations. Previous affiliations of Franz Kreupl include Infineon Technologies & SanDisk.

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Patent

Method for coding and authenticating semiconductor circuits

Ralf Brederlow, +7 more
TL;DR: In this paper, an electrical characteristic of a material layer or layer-type material structure is measured at various points provided with connection contacts, and a mean value of the measurement, taken from a base set of IC chips, is subtracted from a respective value.
Proceedings ArticleDOI

Advancing CMOS with carbon electronics

Franz Kreupl
TL;DR: A fresh look on carbon-based transistor channel materials like single-walled carbon nanotubes (CNT) and graphene nanoribbons (GNR) in future electronic applications is given and essential features which distinguish CNT-FETs from alternative solution will be discussed and benchmarked.
Patent

Trap passivation in memory cell with metal oxide switching element

Deepak Chandra Sekar, +3 more
TL;DR: In this article, a reversible resistivity-switching element is formed by depositing an oxygen diffusion resistant material (e.g., heavily doped Si, W, WN) over the top electrode.
Patent

Integrated electronic component having specifically produced nanotubes in vertical structures

Robert Seidel, +2 more
TL;DR: In this article, an integrated electronic component, comprising a substrate (1), at least one metal multilayer system, which is placed on the substrate at least in areas, and comprising a nonconducting layer (50), was described.
Patent

Artificial neuron comprises a transistor and a number of electrical contacts which can be contacted by the ends of nanostructures

Franz Kreupl, +1 more
TL;DR: In this paper, the first connection of the transistor is coupled to each end of the nanostructures, which are either silicon nano-wires or carbon nano-tubes.