F
Franz Kreupl
Researcher at Technische Universität München
Publications - 269
Citations - 6240
Franz Kreupl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Carbon nanotube & Layer (electronics). The author has an hindex of 40, co-authored 269 publications receiving 5986 citations. Previous affiliations of Franz Kreupl include Infineon Technologies & SanDisk.
Papers
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Proceedings ArticleDOI
Graphenic carbon-silicon contacts for reliability improvement of metal-silicon junctions
Max Stelzer,Franz Kreupl +1 more
TL;DR: In this paper, a graphenic carbon (C) contact deposited on n-type silicon (C-Si) by CVD, has the same low Schottky barrier height of 0.45 eV as TiSi, but a much improved reliability against high current stress.
Journal ArticleDOI
Ultrasmall Pt clusters for single electron tunneling studies
TL;DR: In this article, the first results of self assembled Pt clusters on top of an oxidized Al substrate, fabricated for single electron tunneling studies, were reported, with cluster sizes ranging between 2 and 4 nm and associated Coulomb blockade gaps up to 300 meV at room temperature.
Patent
Structure and fabrication method for resistance-change memory cell in 3-D memory
TL;DR: In this paper, the local contact resistance is established by a junction between a semiconductor layer and a metal layer, and a specified level of resistance according to a doping concentration of the semiconductor and a barrier height of the junction is defined.
Patent
Carbon nanotube field effect transistor has two nanotubes spaced apart to prevent tunnel current between them
TL;DR: The field effect transistor (FE transistor) as mentioned in this paper has a first carbon nanotube (100) providing a source region, a channel region and a drain region, and a second carbon-nodes providing a gate region and supplied with a control voltage for controlling the conductivity of the channel region.
Journal ArticleDOI
Carbon-nanotube computer scaled up.
TL;DR: A microprocessor built from carbon-nanotube transistors is presented, which has the potential to be more energy efficient than their silicon counterparts, but has been restricted in functionality.