Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

Chemistry of Carbon Nanotubes

Carbon nanotubes (CNTs) hold the promise of delivering exceptional mechanical properties and multi-functional characteristics. Ever-increasing interest in applying CNTs in many different fields has led to continued efforts to develop dispersion and functionalization techniques. To employ CNTs as effective reinforcement in polymer nanocomposites, proper dispersion and appropriate interfacial adhesion between the CNTs and polymer matrix have to be guaranteed. This paper reviews the current understanding of CNTs and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT dispersion and functionalization on the properties of CNT/polymer nanocomposites. The fabrication techniques and potential applications of CNT/polymer nanocomposites are also highlighted.

Dispersion and functionalization of carbon nanotubes for polymer-based nanocomposites: a review

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

Carbon is proposed as a new FEOL material with high conductivity and thermal stability for CMOS integration. Here the application of carbon-based electrodes for future DRAM cell capacitors is presented. Trench capacitors with high-k dielectrics have been realized, fulfilling the requirements for serial resistance, capacitance, leakage, reliability and temperature stability beyond the 40 nm technology node.

https://www.hes.ei.tum.de/fileadmin/w00bjl/www/uploads/Aichmayr_VLSI07_talk06.pdf

Carbon / high-k Trench Capacitor for the 40nm DRAM Generation

The present device relates to memory devices for storing electric charge having memory cells and transistors arranged spatially next to them, and relates in particular to memory devices having memory cells with a high capacitance. In the memory cells which form a memory device to which the invention relates, there is a substrate and at least one memory cell which is arranged on the substrate and includes a first electrode element, which is electrically connected to the substrate, an insulation layer, which has been applied to the first electrode element, and a second electrode element, which has been applied to the insulation layer and is electrically insulated from the first electrode element.

Memory device for storing electric charge, and method for fabricating it

Although horizontally-aligned carbon nanotube (HACNT) interconnects are the most common scenarios that have been modeled and analyzed in theoretical research, fabrication of HACNT test structures has remained an enigma until now. Through addressing several fabrication challenges, this paper reports a novel process that enables fabrication of high-density, long (over hundred microns), and thick (up to micrometer) HACNT interconnects. Furthermore, horizontal CNT-based 2-D Manhattan structure is demonstrated by properly designing the catalyst and flattening process. These structures are crucial for building angled interconnects and on-chip passive devices. In addition, to address the contact issue between metal and thick HACNT bundles, a multistep lithography combined with specifically designed metal deposition technique is performed to ensure full contact configuration. Using such a process, test structures with arrays of various sizes of HACNT bundle interconnects are fabricated. The process developed in this paper provides an important platform for future research and technology development of CNT-based interconnects and passive elements.

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Development

The semiconductor industry is expecting extraordinary technological challenges, so the readiness to integrate exotic materials with superior properties into microelectronic chips is increasing and new concepts are attracting more interest. This paper reviews recent research developments aimed at the design of carbon nanotube (CNT)‐based vertical interconnects. We introduce our concept for the integration of CNTs into microelectronic chips that is based on a combination of conventional technology, advanced processing methods (lithography and deposition), and self‐aligned processes.

Nanoelectronics Based on Carbon Nanotubes: Technological Challenges and Recent Developments

The invention relates to a vertical integrated component, a component arrangement and a method for production of a vertical integrated component. The vertical integrated component has a first electrical conducting layer (101), a mid layer (102), partly embodied from dielectric material on the first electrical conducting layer, a second electrical conducting layer (103) on the mid layer and a nanostructure (104) integrated in a through hole introduced in the mid layer with a first end section coupled to the first electrical conducting layer and a second end section coupled to the second electrical conducting layer. The mid layer comprises a third electrical conducting layer (105) between two adjacent dielectric partial layers (102a, 102b) the thickness of which is less than the thickness of at least one of the dielectric partial layers.

Franz Kreupl

Papers

Carbon / high-k Trench Capacitor for the 40nm DRAM Generation

Memory device for storing electric charge, and method for fabricating it

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part I: Process Development

Nanoelectronics Based on Carbon Nanotubes: Technological Challenges and Recent Developments

Vertical integrated component, component arrangement and method for production of a vertical integrated component