F
Franz Kreupl
Researcher at Technische Universität München
Publications - 269
Citations - 6240
Franz Kreupl is an academic researcher from Technische Universität München. The author has contributed to research in topics: Carbon nanotube & Layer (electronics). The author has an hindex of 40, co-authored 269 publications receiving 5986 citations. Previous affiliations of Franz Kreupl include Infineon Technologies & SanDisk.
Papers
More filters
Patent
Carbon diode array for resistivity changing memories
TL;DR: An integrated circuit and method for manufacturing an integrated circuit are described in this paper, which includes a memory cell including a resistivity changing memory element and a carbon diode electrically coupled to the resistivity-changing memory element.
Patent
Phase change memory cell having nanowire electrode
TL;DR: In this paper, a memory cell includes a first electrode comprising a nanowire, a second electrode, and phase-change material between the first electrode and the second electrode; the phase change material is applied to the first and second electrodes, respectively.
Journal ArticleDOI
Silicon to nickel‐silicide axial nanowire heterostructures for high performance electronics
Walter M. Weber,Walter M. Weber,Lutz Geelhaar,Eugen Unger,Caroline Chèze,Franz Kreupl,Henning Riechert,Paolo Lugli +7 more
TL;DR: In this article, the Schottky contact field effect transistors (FETs) were used to fabricate axial nanowire (NW) heterostructures, where the n ++ -substrate was used as a common back gate and the Si to NiSi 2 interfaces formed the S/D-Schottky source-and drain-(S/D) contacts.
Journal ArticleDOI
Electronics: Carbon nanotubes finally deliver.
TL;DR: A carbon-nanotube transistor has been made that performs better than the best conventional silicon analogues and propels these devices to the forefront of future microchip technologies.
Proceedings ArticleDOI
A Perpendicular Spin Torque Switching based MRAM for the 28 nm Technology Node
U. K. Klostermann,M. Angerbauer,U. Griming,Franz Kreupl,M. Ruhrig,F. Dahmani,Michael Kund,G. Miiller +7 more
TL;DR: In this article, a spin torque select MRAM with perpendicular anisotropy (P-ST-MRAM) is proposed for the 28 nm technology node, which offers high write endurance and high write speed.