Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

Chemistry of Carbon Nanotubes

Carbon nanotubes (CNTs) hold the promise of delivering exceptional mechanical properties and multi-functional characteristics. Ever-increasing interest in applying CNTs in many different fields has led to continued efforts to develop dispersion and functionalization techniques. To employ CNTs as effective reinforcement in polymer nanocomposites, proper dispersion and appropriate interfacial adhesion between the CNTs and polymer matrix have to be guaranteed. This paper reviews the current understanding of CNTs and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT dispersion and functionalization on the properties of CNT/polymer nanocomposites. The fabrication techniques and potential applications of CNT/polymer nanocomposites are also highlighted.

Dispersion and functionalization of carbon nanotubes for polymer-based nanocomposites: a review

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

L'invention concerne un procede servant a deposer un materiau de carbone conducteur (17) sur un semi-conducteur (14) afin de creer un contact Schottky (16). Ce procede consiste a: introduire un semi-conducteur (14) dans une chambre de traitement (10), rechauffer l'interieur (10') de la chambre de traitement (10) a une temperature determinee, faire le vide dans la chambre de traitement (10) jusqu'a un niveau egal ou inferieur a une premiere pression determinee, rechauffer l'interieur (10') de la chambre de traitement (10) a un deuxieme niveau egal a une temperature determinee, introduire un gaz (12) contenant au moins du carbone, jusqu'a l'obtention d'une deuxieme pression determinee superieure a la premiere pression determinee et deposer le materiau de carbone conducteur (17) sur le semi-conducteur (14) a partir dudit gaz (12), le materiau depose (17) constituant le contact Schottky (16) sur le semi-conducteur (14).

Procede servant a deposer un materiau de carbone conducteur sur un semi-conducteur pour creer un contact schottky et dispositif de contact de semi-conducteur

Die Erfindung betrifft ein Kohlenstoffnanorohren-Katalysatormaterial, eine Kohlenstoffnanorohren-Anordnung und ein Verfahren zum Herstellen einer Kohlenstoffnanorohren-Anordnung. Das Kohlenstoffnanorohren-Katalysatormaterial zum Katalysieren des Aufwachsens von Kohlenstoffnanorohren auf dem Kohlenstoffnanorohren-Katalysatormaterial weist Eisen, mindestens ein weiteres Material, ausgewahlt aus Chrom, Nickel, Cobalt, Platin oder Palladium und Kohlenstoff auf.

Kohlenstoffnanoröhren-katalysatormaterial, kohlenstoffnanoröhren-anordnung und verfahren zum herstellen einer kohlenstoffnanoröhren-anordnung

Die Erfindung betrifft ein Verfahren zum Herstellen einer Schicht-Anordnung und eine Schicht-Anordnung. The invention relates to a process for fabricating a layer arrangement, and a layer arrangement. Bei dem Verfahren zum Herstellen einer Schicht-Anordnung werden zwei im Wesentlichen parallel zueinander verlaufende elektrisch leitfahige Leiterbahnen auf einem Substrat ausgebildet, wird mindestens eine Hilfsstruktur auf dem Substrat und zwischen den beiden Leiterbahnen, verlaufend entlang einer ersten Richtung, ausgebildet, welche erste Richtung mit einer orthogonal zu beiden Leiterbahnen verlaufenden Verbindungsachse der Leiterbahnen einen spitzen oder rechten Winkel von mindestens 45 DEG einschliest, wobei die mindestens eine Hilfsstruktur aus einem Material hergestellt ist, dass die mindestens eine Hilfsstruktur von der dielektrischen Schicht selektiv entfernbar ist. In the method for producing a layer arrangement of two substantially mutually parallel electrically conductive conductor tracks are formed on a substrate, at least one auxiliary structure on the substrate and between the two conductor tracks which extend along a first direction are formed, which first direction with a running orthogonally to the two interconnects connecting axis of the conductor paths at an acute or right angle of at least 45 DEG, wherein the at least one auxiliary structure is made of a material that the at least one auxiliary structure of the dielectric layer is selectively removable. Ferner wird eine dielektrische Schicht zwischen den beiden Leiterbahnen ausgebildet, derart, dass die mindestens eine Hilfsstruktur zumindest teilweise von der dielektrischen Schicht bedeckt wird. Further, a dielectric layer between the two conductor tracks is formed, such that the at least one auxiliary structure is at least partially covered by the dielectric layer.

Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung A method for producing a layer arrangement and layer arrangement

The circuit has a gate oxide layer (308) arranged on a channel of a semiconductor-transistor. A changeable gate-stack-layer is arranged between the gate oxide layer and a gate electrode (312). The gate-stack (310) has a resistive switching element whose conductivity is changed for changing an on-resistance of the semiconductor-transistor. The transistor stores information based on changing of the on-resistance of the transistor at a preset gate-voltage. The gate-stack-layer is made of a phase-change material e.g. chalcogenide glass. Independent claims are also included for the following: (1) a method for producing an integrated circuit (2) a system comprising a processor (3) a hard disk drive mechanism comprising a controller (4) a method for storing information (5) a method for producing a memory cell.

Integrated circuit e.g. dynamic RAM, for use in e.g. personal digital assistant, has gate-stack with resistive switching element whose conductivity is changed for changing on-resistance of semiconductor-transistor

Vertikal integrierter Feldeffekttransistor, Feldeffekttransistor-Anordnung und Verfahren zum Herstellen eines vertikal integrierten Feldeffekttransistors Vertically integrated field-effect transistor, field effect transistor arrangement and method for manufacturing a vertically-integrated field-effect transistor

Franz Kreupl

Papers

Procede servant a deposer un materiau de carbone conducteur sur un semi-conducteur pour creer un contact schottky et dispositif de contact de semi-conducteur

Kohlenstoffnanoröhren-katalysatormaterial, kohlenstoffnanoröhren-anordnung und verfahren zum herstellen einer kohlenstoffnanoröhren-anordnung

Verfahren zum Herstellen einer Schicht-Anordnung und Schicht-Anordnung A method for producing a layer arrangement and layer arrangement

Integrated circuit e.g. dynamic RAM, for use in e.g. personal digital assistant, has gate-stack with resistive switching element whose conductivity is changed for changing on-resistance of semiconductor-transistor