Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

Chemistry of Carbon Nanotubes

Carbon nanotubes (CNTs) hold the promise of delivering exceptional mechanical properties and multi-functional characteristics. Ever-increasing interest in applying CNTs in many different fields has led to continued efforts to develop dispersion and functionalization techniques. To employ CNTs as effective reinforcement in polymer nanocomposites, proper dispersion and appropriate interfacial adhesion between the CNTs and polymer matrix have to be guaranteed. This paper reviews the current understanding of CNTs and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT dispersion and functionalization on the properties of CNT/polymer nanocomposites. The fabrication techniques and potential applications of CNT/polymer nanocomposites are also highlighted.

Dispersion and functionalization of carbon nanotubes for polymer-based nanocomposites: a review

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

Nominally undoped silicon nanowires (NW) were grown by catalytic chemical vapor deposition. The growth process was optimized to control the NWs diameters by using different Au catalyst thicknesses on amorphous SiO 2 , Si 3 N 4 , or crystalline-Si substrates. For SiO 2 substrates an Ar plasma treatment was used to homogenize the catalyst coalescence, and thus the NWs diameter. Furthermore, planar field effect transistors (FETs) were fabricated by implementing 13 to 30 nm thin nominally undoped Si-NWs as the active region. Various silicides were investigated as Schottky-barrier source and drain contacts for the active region. For CoSi, NiSi and PdSi contacts, the FETs transfer characteristics showed p-type behavior. A FET consisting of a single Si-NW with 20 nanometers diameter and 2.5 μm gate-length delivers as much as 0.15 μA on-current at 1 volt bias voltage and has an on/off current ratio of 10 7 . This is in contrast to recent reports of low conductance in undoped Si.

Silicon nanowires: catalytic growth and electrical characterization

Low-power, reproducible operation of Resistive RAM (RRAM) requires control of capacitive surge currents during write. We propose a fab-friendly TiN/conductive TaO x /HfO 2 /TiN RRAM with a built-in surge current reduction layer. It reduces worst case write current by 33% and fail bit count by 23× compared to conventional RRAM. A novel circuit to control surge current is demonstrated that improves write current by 40% and endurance by 63%. Switching, endurance and retention data for a 256kb chip with these concepts is presented.

Technology and circuit optimization of resistive RAM for low-power, reproducible operation

A nonvolatile memory cell is described, including a carbon layer system that includes an sp2-rich amorphous carbon layer and an sp3-rich amorphous carbon layer, wherein information is stored in the nonvolatile memory cell by reversibly forming an sp2-rich filament in the sp3-rich amorphous carbon layer.

Carbon filament memory and method for fabrication

Es wird ein Verfahren zum Strukturieren eines Substrats (20) vorgeschlagen, bei dem nach dem Atzen des Substrats (20) Atzruckstande (30) von der Oberflache des Substrats (20) durch einen Gasstrom (50) entfernt werden. Die Reinigung erfolgt im wesentlichen durch eine Impulsubertragung vom Gasstrom (50) auf die Atzruckstande (30), die dadurch vom Substrat (20) entfernt werden. Besonders gute Reinigungsergebnisse werden mit einem Gasstrom (50) erreicht, der erstarrte Gaspartikel (45) aufweist. Das Verfahren eignet sich insbesondere zum Strukturieren von Metallschichten (20).

Verfahren zum Strukturieren eines Substrats

A magnetic memory unit having a first magnetizable electrode, a second magnetizable electrode, and at least one nanotube arranged between the electrodes in a longitudinal direction and coupled to the first electrode by a first longitudinal end and to the second electrode by a second longitudinal end. A storage information item is stored in the memory unit in a nonvolatile fashion by setting a magnetization direction of one of the magnetizable electrodes by applying an external magnetic field.

Franz Kreupl

Papers

Silicon nanowires: catalytic growth and electrical characterization

Technology and circuit optimization of resistive RAM for low-power, reproducible operation

Carbon filament memory and method for fabrication

Verfahren zum Strukturieren eines Substrats

Magnetic memory unit and magnetic memory array