Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

Chemistry of Carbon Nanotubes

Carbon nanotubes (CNTs) hold the promise of delivering exceptional mechanical properties and multi-functional characteristics. Ever-increasing interest in applying CNTs in many different fields has led to continued efforts to develop dispersion and functionalization techniques. To employ CNTs as effective reinforcement in polymer nanocomposites, proper dispersion and appropriate interfacial adhesion between the CNTs and polymer matrix have to be guaranteed. This paper reviews the current understanding of CNTs and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT dispersion and functionalization on the properties of CNT/polymer nanocomposites. The fabrication techniques and potential applications of CNT/polymer nanocomposites are also highlighted.

Dispersion and functionalization of carbon nanotubes for polymer-based nanocomposites: a review

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

Due to the enormous challenges of fabricating long horizontally aligned carbon nanotube (HACNT) bundle interconnects, there exists little research on characterization of long HACNT interconnects. In this paper, taking advantage of our unique HACNT fabrication process outlined in the companion paper, the electrical and self-heating characterization of long HACNT bundles are reported. Negative temperature coefficients of resistance for both per unit length resistance and metal-CNT contact resistance are confirmed from measurements. This first report on the electrical and thermal characterization fills the wide gap between CNT interconnect modeling efforts and corresponding experimental efforts by providing many important extracted parameters that are critical in various modeling and analyses.

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part II: Characterization

A magnetoresistive tunnel element includes first and second electrodes and a tunnel barrier disposed between the two electrodes, the tunnel barrier having at least two barrier layers made of different barrier materials, the profile of a quantum mechanical barrier height within the tunnel barrier being asymmetrical and the conductivity of the tunnel element, therefore, being dependent on the polarity of a voltage Um between the two electrodes. Also provided is a magnetoresistive memory cell, a cell array of magnetoresistive memory cells, and a memory device having cell arrays.

Magnetoresistive memory cell with polarity-dependent resistance

A memory cell having a storage capacitor and a vertical switching transistorm, which has a semiconducting nanostructure which has grown on at least part of the storage capacitor and includes a semiconducting nanotube, a bundle of semiconducting nanotubes, or a semiconducting nanorod.

Memory cell, memory cell arrangement, patterning arrangement, and method for fabricating a memory cell

Carbon-based materials like nanotubes and graphene are heavily investigated as future transistor devices and in interconnect applications. While much of the interest has been devoted to the device aspects in competition to conventional transistors, the paper here will focus on some less known applications of pyrolytically deposited carbon. Proposed and demonstrated are applications in capacitors, gate materials, through-silicon vias, novel non-volatile memories, carbon-silicon Schottky diodes and sensors.

Carbon-based Materials as Key-enabler for “More Than Moore”

An integrated circuit with a substrate with a lower and an upper surface is described A via extends between the upper and the lower surface of the substrate The via contains a conductive filling material that comprises carbon

Franz Kreupl

Papers

Low-Resistivity Long-Length Horizontal Carbon Nanotube Bundles for Interconnect Applications—Part II: Characterization

Magnetoresistive memory cell with polarity-dependent resistance

Memory cell, memory cell arrangement, patterning arrangement, and method for fabricating a memory cell

Carbon-based Materials as Key-enabler for “More Than Moore”

Semiconductor chip with integrated via