Department of Materials Science, University of Patras, 26504 Rio Patras, Greece, Theoretical and Physical Chemistry Institute, National Hellenic Research Foundation, 48 Vass. Constantinou Avenue, 116 35 Athens, Greece, Institut de Biologie Moleculaire et Cellulaire, UPR9021 CNRS, Immunologie et Chimie Therapeutiques, 67084 Strasbourg, France, and Dipartimento di Scienze Farmaceutiche, Universita di Trieste, Piazzale Europa 1, 34127 Trieste, Italy

Chemistry of Carbon Nanotubes

Carbon nanotubes (CNTs) hold the promise of delivering exceptional mechanical properties and multi-functional characteristics. Ever-increasing interest in applying CNTs in many different fields has led to continued efforts to develop dispersion and functionalization techniques. To employ CNTs as effective reinforcement in polymer nanocomposites, proper dispersion and appropriate interfacial adhesion between the CNTs and polymer matrix have to be guaranteed. This paper reviews the current understanding of CNTs and CNT/polymer nanocomposites with two particular topics: (i) the principles and techniques for CNT dispersion and functionalization and (ii) the effects of CNT dispersion and functionalization on the properties of CNT/polymer nanocomposites. The fabrication techniques and potential applications of CNT/polymer nanocomposites are also highlighted.

Dispersion and functionalization of carbon nanotubes for polymer-based nanocomposites: a review

The semiconductor industry has been able to improve the performance of electronic systems for more than four decades by making ever-smaller devices. However, this approach will soon encounter both scientific and technical limits, which is why the industry is exploring a number of alternative device technologies. Here we review the progress that has been made with carbon nanotubes and, more recently, graphene layers and nanoribbons. Field-effect transistors based on semiconductor nanotubes and graphene nanoribbons have already been demonstrated, and metallic nanotubes could be used as high-performance interconnects. Moreover, owing to the excellent optical properties of nanotubes it could be possible to make both electronic and optoelectronic devices from the same material.

Carbon-based electronics.

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

The invention relates to a memory cell, memory cell arrangement, structuring arrangement and method for production of a memory cell. The memory cell has a vertical gate transistor and a memory capacitor, whereby the vertical gate transistor comprises a semiconducting nanostructure, grown on at least part of the memory capacitor.

Memory cell, memory cell arrangement, structuring arrangement and method for production of a memory cell

Electronic storage element (600) comprises first nanotubes (601) and second nanotubes (603) arranged skew to each other or crossing each other so that an electrical coupling is produced between one part of the first tubes and one part of the second tubes. It is possible to decide whether the tubes are electrically coupled to each other or not at their crossing points (605). An Independent claim is also included for a process for the production of an electronic storage element. Preferred Features: The nanotubes are carbon nanotubes. A dielectric is arranged between the first and second nanotubes. A layer system made up of a first silicon dioxide layer, a silicon nitride layer and a second silicon dioxide layer is arranged between the first and second nanotubes.

Electronic storage element used in CMOS technology comprises carbon nanotubes arranged skew to each other or crossing each other so that an electrical coupling is produced between the tubes

Ein
elektrischer Schaltkreis weist zumindest eine Kohlenstoff-Leiterstruktur
auf, welche mittels einer im wesentlichen aus Kohlenstoff bestehenden Schicht
ausgebildet ist, welche einen spezifischen Widerstand von weniger
als 1 mΩcm
aufweist

Elektrischer Schaltkreis mit einer Kohlenstoff-Leiterstruktur und Verfahren zum Herstellen einer Kohlenstoff-Leiterstruktur eines elektrischen Schaltkreises

In order to fabricate a metallization plane with lines and contacts, four dielectric layers are applied to a substrate. Firstly, contact holes are etched through the top two dielectric layers into the underlying dielectric layer, the remaining thickness of the latter layer being essentially equal to the thickness of the top layer. Line trenches are subsequently etched selectively with respect to the first dielectric layer and the third dielectric layer, whose surfaces are uncovered essentially simultaneously. After the first dielectric layer and the third dielectric layer have been patterned, contacts and lines are produced in the contact holes and line trenches.

Method for producing integrated circuit having at least one metalilized surface

Die Erfindung betrifft eine Speicherzelle, eine Speicherzellen-Anordnung, eine Strukturier-Anordnung und ein Verfahren zum Herstellen einer Speicherzelle Die Speicherzelle hat einen Vertikal-Schalt-Transistor und einen Speicher-Kondensator, wobei der Vertikal-Schalt-Transistor eine halbleitende Nanostruktur aufweist, die auf zumindest einem Teil des Speicher-Kondensators aufgewachsen ist

Franz Kreupl

Papers

Memory cell, memory cell arrangement, structuring arrangement and method for production of a memory cell

Electronic storage element used in CMOS technology comprises carbon nanotubes arranged skew to each other or crossing each other so that an electrical coupling is produced between the tubes

Elektrischer Schaltkreis mit einer Kohlenstoff-Leiterstruktur und Verfahren zum Herstellen einer Kohlenstoff-Leiterstruktur eines elektrischen Schaltkreises

Method for producing integrated circuit having at least one metalilized surface

Speicherzelle, speicherzellen-anordnung, strukturier-anordnung und verfahren zum herstellen einer speicherzelle