F
Fred Schedin
Researcher at University of Manchester
Publications - 64
Citations - 42537
Fred Schedin is an academic researcher from University of Manchester. The author has contributed to research in topics: Graphene & Plasmon. The author has an hindex of 32, co-authored 63 publications receiving 39527 citations.
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Journal ArticleDOI
Two-dimensional atomic crystals
Kostya S. Novoselov,Da Jiang,Fred Schedin,Timothy J. Booth,V. V. Khotkevich,Sergey V. Morozov,Andre K. Geim +6 more
TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Journal ArticleDOI
Detection of individual gas molecules adsorbed on graphene
Fred Schedin,A. K. Geim,Sergey V. Morozov,Ernie W. Hill,Peter Blake,Mikhail I. Katsnelson,K. S. Novoselov +6 more
TL;DR: In this paper, it was shown that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphene's surface.
Journal ArticleDOI
Detection of Individual Gas Molecules Absorbed on Graphene
TL;DR: In this paper, it was shown that micrometre-size sensors made from graphene are capable of detecting individual events when a gas molecule attaches to or detaches from graphenes surface.
Journal ArticleDOI
Giant intrinsic carrier mobilities in graphene and its bilayer
Sergey V. Morozov,K. S. Novoselov,Mikhail I. Katsnelson,Fred Schedin,D. C. Elias,John A. Jaszczak,A. K. Geim +6 more
TL;DR: Measurements show that mobilities higher than 200 000 cm2/V s are achievable, if extrinsic disorder is eliminated and a sharp (thresholdlike) increase in resistivity observed above approximately 200 K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intraripple flexural phonons.
Journal ArticleDOI
Field-effect tunneling transistor based on vertical graphene heterostructures.
L. Britnell,Roman V. Gorbachev,Rashid Jalil,Branson D. Belle,Fred Schedin,Artem Mishchenko,Thanasis Georgiou,Mikhail I. Katsnelson,Laurence Eaves,Sergey V. Morozov,Nuno M. R. Peres,Nuno M. R. Peres,Jon Leist,Andre K. Geim,K. S. Novoselov,Leonid Ponomarenko +15 more
TL;DR: A bipolar field-effect transistor that exploits the low density of states in graphene and its one-atomic-layer thickness is reported, which has potential for high-frequency operation and large-scale integration.