H
Heng-Yuan Lee
Researcher at Industrial Technology Research Institute
Publications - 95
Citations - 5401
Heng-Yuan Lee is an academic researcher from Industrial Technology Research Institute. The author has contributed to research in topics: Resistive random-access memory & Non-volatile memory. The author has an hindex of 27, co-authored 94 publications receiving 4576 citations. Previous affiliations of Heng-Yuan Lee include National Tsing Hua University & Minghsin University of Science and Technology.
Papers
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Journal ArticleDOI
Metal–Oxide RRAM
Hon-Sum Philip Wong,Heng-Yuan Lee,Shimeng Yu,Yu-Sheng Chen,Yi Wu,Pang-Shiu Chen,Byoungil Lee,Frederick T. Chen,Ming-Jinn Tsai +8 more
TL;DR: The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide resistive switching random access memory (RRAM) are discussed, with a focus on the use of RRAM for nonvolatile memory application.
Proceedings ArticleDOI
A 4Mb embedded SLC resistive-RAM macro with 7.2ns read-write random-access time and 160ns MLC-access capability
Shyh-Shyuan Sheu,Meng-Fan Chang,Ku-Feng Lin,Che-Wei Wu,Yu-Sheng Chen,Pi-Feng Chiu,Chia-Chen Kuo,Yih-Shan Yang,Pei-Chia Chiang,Wen-Pin Lin,Che-He Lin,Heng-Yuan Lee,Pei-Yi Gu,Sum-Min Wang,Frederick T. Chen,Keng-Li Su,Chen-Hsin Lien,Kuo-Hsing Cheng,Hsin-Tun Wu,Tzu-Kun Ku,Ming-Jer Kao,Ming-Jinn Tsai +21 more
TL;DR: This work proposes process/resistance variation-insensitive read schemes for embedded RRAM to achieve fast read speeds with high yields and an embedded mega-bit scale, single-level-cell (SLC) RRAM macro with sub-8ns read-write random-access time is presented.
Proceedings ArticleDOI
Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity
Yu-Sheng Chen,Heng-Yuan Lee,Pang-Shiu Chen,P. Y. Gu,C. W. Chen,W. P. Lin,W. H. Liu,Y. Y. Hsu,Shyh-Shyuan Sheu,P. C. Chiang,W. S. Chen,Frederick T. Chen,Chen-Hsin Lien,Ming-Jinn Tsai +13 more
TL;DR: In this article, a 30×30 nm2 HfO x resistance random access memory (RRAM) with excellent electrical performances was demonstrated for the scaling feasibility in this work, and a 1 Kb one transistor and one resistor (1T1R) array with robust characteristics was also fabricated successfully.
Journal ArticleDOI
Low-Power Switching of Nonvolatile Resistive Memory Using Hafnium Oxide
Heng-Yuan Lee,Pang-Shiu Chen,Ching-Chiun Wang,Siddheswar Maikap,Pei-Jer Tzeng,Cha-Hsin Lin,Lurng-Shehng Lee,Ming-Jinn Tsai +7 more
TL;DR: In this paper, a nonstoichiometric hafnium oxide (HfOx) resistive-switching memory with low power operation has been demonstrated, where polycrystalline HfOx (O:Hf=1.5:1) films with a thickness of 20 nm are grown on a titanium nitride (TiN) bottom electrode by commercial atomic layer deposition.
Patent
Method of manufacturing charge storage device
TL;DR: In this article, a stacked gradual material layer such as a hafnium silicon oxide (Hf x Si y O z ) layer is formed and the silicon content is gradually changed throughout the duration of the deposition process.