H
Heng-Yuan Lee
Researcher at Industrial Technology Research Institute
Publications - 95
Citations - 5401
Heng-Yuan Lee is an academic researcher from Industrial Technology Research Institute. The author has contributed to research in topics: Resistive random-access memory & Non-volatile memory. The author has an hindex of 27, co-authored 94 publications receiving 4576 citations. Previous affiliations of Heng-Yuan Lee include National Tsing Hua University & Minghsin University of Science and Technology.
Papers
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Journal ArticleDOI
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots
Writam Banerjee,Siddheswar Maikap,Chao-Sung Lai,Yi-Yan Chen,T. C. Tien,Heng-Yuan Lee,Wei-Su Chen,Frederick T. Chen,Ming-Jer Kao,Ming-Jinn Tsai,Jer-Ren Yang +10 more
TL;DR: Stable resistive switching characteristics under positive formation polarity on the IrOx electrode are observed, and the conducting filament is controlled by oxygen ion migration toward the Al2O3/IrOx top electrode interface.
Proceedings ArticleDOI
Extremely Steep Switch of Negative-Capacitance Nanosheet GAA-FETs and FinFETs
Min-Hung Lee,K.-T. Chen,C.-Y. Liao,S.-S. Gu,G.-Y. Siang,Y.-C. Chou,H.-Y. Chen,J. Le,R.-C. Hong,Z.-Y. Wang,S.-Y. Chen,P.-G. Chen,M. Tang,Y. D. Lin,Heng-Yuan Lee,K.-S. Li,Chee-Wee Liu +16 more
TL;DR: In this article, the negative-capacitance (NC) Nanosheet (NS) GAA-FETs and Fin FETs were experimentally presented with a sub-60m V/dec current magnitude of >4 and ∼5 decades for NC-NSGAA and FinFET, respectively.
Journal ArticleDOI
Direct evidence for stress-induced (001) anisotropy of rapid-annealed FePt thin films
TL;DR: In this paper, the role of rapid thermal annealing (RTA) on the evolution of crystallographic anisotropy of single-layered FePt films has been characterized.
Journal ArticleDOI
HfOx Thin Films for Resistive Memory Device by Use of Atomic Layer Deposition
TL;DR: In this paper, a nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si was prepared by atomic layer chemical vapor deposition (ALCVD).
Journal ArticleDOI
Enhanced nanoscale resistive switching memory characteristics and switching mechanism using high-Ge-content Ge0.5Se0.5 solid electrolyte.
S. Z. Rahaman,Siddheswar Maikap,Atanu Das,Amit Prakash,Ya Hsuan Wu,Chao-Sung Lai,T. C. Tien,Wei-Su Chen,Heng-Yuan Lee,Frederick T. Chen,Ming-Jinn Tsai,Liann-Be Chang +11 more
TL;DR: Enhanced repeatable nanoscale bipolar resistive switching memory characteristics in Al/Cu/Ge0.5Se0.4/W structures are demonstrated and a large memory size of 1,300 Pbit/in2 is achieved with a small nanofilament diameter of 0.25 Å for a small current compliance of 1 nA.