H
Hiroshi Yamaguchi
Researcher at Nippon Telegraph and Telephone
Publications - 571
Citations - 14406
Hiroshi Yamaguchi is an academic researcher from Nippon Telegraph and Telephone. The author has contributed to research in topics: Resonator & Molecular beam epitaxy. The author has an hindex of 47, co-authored 519 publications receiving 13016 citations. Previous affiliations of Hiroshi Yamaguchi include Osaka University & Imperial College London.
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The whole structure of the 13-subunit oxidized cytochrome c oxidase at 2.8 A.
Tomitake Tsukihara,Hiroshi Aoyama,Eiki Yamashita,Takashi Tomizaki,Hiroshi Yamaguchi,Kyoko Shinzawa-Itoh,Ryosuke Nakashima,Rieko Yaono,Shinya Yoshikawa +8 more
TL;DR: Two possible proton pathways for pumping, each spanning from the matrix to the cytosolic surfaces, were identified, including hydrogen bonds, internal cavities likely to contain water molecules, and structures that could form hydrogen bonds with small possible conformational change of amino acid side chains.
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Structures of metal sites of oxidized bovine heart cytochrome c oxidase at 2.8 A
Tomitake Tsukihara,Hiroshi Aoyama,Eiki Yamashita,Takashi Tomizaki,Hiroshi Yamaguchi,Kyoko Shinzawa-Itoh,Ryosuke Nakashima,Rieko Yaono,Shinya Yoshikawa +8 more
TL;DR: The high resolution three-dimensional x-ray structure of the metal sites of bovine heart cytochrome c oxidase is reported, suggesting a dinuclear copper center with an unexpected structure similar to a [2Fe-2S]-type iron-sulfur center.
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15N−15N J-Coupling Across HgII: Direct Observation of HgII-Mediated T−T Base Pairs in a DNA Duplex
TL;DR: N−N J-coupling across a metal center (2JNN) was clearly detected in a biological macromolecule (DNA duplex) for the first time and the base pairing mode of mercury-mediated T−T pairs (T−HgII−T) was definitely determined.
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Low-Temperature Growth of GaAs and AlAs-GaAs Quantum-Well Layers by Modified Molecular Beam Epitaxy
TL;DR: In this paper, GaAs and AlAs were used for growing high quality GaAs/AlAs layers at very low temperatures by alternately supplying Ga or Al atoms and As4 molecules to the GaAs substrate.
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Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons
Hiroki Hibino,Hiroyuki Kageshima,Fumihiko Maeda,Masao Nagase,Yoshihiro Kobayashi,Hiroshi Yamaguchi +5 more
TL;DR: In this paper, low-energy electron microscopy (LEEM) was used to measure the reflectivity of low energy electrons from graphitized graphitized silicon carbide (SiC) substrate.