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Ivan J. Vera-Marun

Researcher at University of Manchester

Publications -  56
Citations -  2740

Ivan J. Vera-Marun is an academic researcher from University of Manchester. The author has contributed to research in topics: Spintronics & Graphene. The author has an hindex of 22, co-authored 51 publications receiving 2195 citations. Previous affiliations of Ivan J. Vera-Marun include National University of Singapore & University of Groningen.

Papers
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Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors

TL;DR: In this article, the authors characterized fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors fabricated under inert gas conditions by utilizing graphene as source-drain electrodes and boron nitride as an encapsulation layer.
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Colloquium: Spintronics in graphene and other two-dimensional materials

TL;DR: In this paper, the authors give an overview of the developing field of spintronics and outline the experimental and theoretical state-of-the-art of the art. But their focus is on van der Waals heterostructures, which consist of stacks of two-dimensional materials in precisely controlled order.
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Quantized conductance of a suspended graphene nanoconstriction

TL;DR: In this article, conductance quantization of the current flowing across a nanometre-scale constriction in graphene has been demonstrated by using high-quality suspended samples and a constriction whose length is shorter than its width.
Journal Article

Electrical characterization of fully encapsulated ultra thin black phosphorous-based heterostructures with graphene contacts

TL;DR: In this paper, the authors demonstrate fully encapsulated ultrathin (down to bilayer) field effect transistors in Van der Waals heterostructures to preclude their stability and degradation problems which have limited their potential for applications.