Air-Stable Transport in Graphene-Contacted, Fully Encapsulated Ultrathin Black Phosphorus-Based Field-Effect Transistors
Ahmet Avsar,Ivan J. Vera-Marun,Ivan J. Vera-Marun,Jun You Tan,Kenji Watanabe,Takashi Taniguchi,Antonio H. Castro Neto,Barbaros Özyilmaz +7 more
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TLDR
In this article, the authors characterized fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors fabricated under inert gas conditions by utilizing graphene as source-drain electrodes and boron nitride as an encapsulation layer.Abstract:
The presence of direct bandgap and high mobility in semiconductor few-layer black phosphorus offers an attractive prospect for using this material in future two-dimensional electronic devices. However, creation of barrier-free contacts which is necessary to achieve high performance in black phosphorus-based devices is challenging and currently limits their potential for applications. Here, we characterize fully encapsulated ultrathin (down to bilayer) black phosphorus field effect transistors fabricated under inert gas conditions by utilizing graphene as source–drain electrodes and boron nitride as an encapsulation layer. The observation of a linear ISD–VSD behavior with negligible temperature dependence shows that graphene electrodes lead to barrier-free contacts, solving the issue of Schottky barrier limited transport in the technologically relevant two-terminal field-effect transistor geometry. Such one-atom-thick conformal source–drain electrodes also enable the black phosphorus surface to be sealed, ...read more
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Recent Advances in Ultrathin Two-Dimensional Nanomaterials
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TL;DR: In this article, the authors discuss the potential of black phosphorus (black P) as a 2D layered material for nanoelectronics and nanophotonics, and give their perspectives on future 2D and thin-film black P research directions.
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Two-dimensional semiconductors for transistors
TL;DR: In this article, a mathematical framework to evaluate the performance of FETs and describe the challenges for improving the performances of short-channel FET in relation to the properties of 2D materials, including graphene, transition metal dichalcogenides, phosphorene and silicene.
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Phosphorene: from theory to applications
TL;DR: In this article, a review of the physical properties of phosphorene and its application in 2D semiconductor materials is presented. But, unlike graphene, phosphorenes have an anisotropic orthorhombic structure that is ductile along one of the inplane crystal directions but stiff along the other.
References
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Black phosphorus field-effect transistors
Likai Li,Yijun Yu,Guo Jun Ye,Q. Q. Ge,Xuedong Ou,Hua Wu,Donglai Feng,Xianhui Chen,Yuanbo Zhang +8 more
TL;DR: In this article, a few-layer black phosphorus crystals with thickness down to a few nanometres are used to construct field effect transistors for nanoelectronic devices. But the performance of these materials is limited.
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Boron nitride substrates for high-quality graphene electronics
Cory Dean,Andrea Young,Inanc Meric,Changgu Lee,Lei Wang,Sebastian Sorgenfrei,Kenji Watanabe,Takashi Taniguchi,Philip Kim,Kenneth L. Shepard,James Hone +10 more
TL;DR: Graphene devices on h-BN substrates have mobilities and carrier inhomogeneities that are almost an order of magnitude better than devices on SiO(2).
Journal ArticleDOI
Phosphorene: An Unexplored 2D Semiconductor with a High Hole Mobility
TL;DR: In this paper, the 2D counterpart of layered black phosphorus, which is called phosphorene, is introduced as an unexplored p-type semiconducting material and the authors find that the band gap is direct, depends on the number of layers and the in-layer strain, and significantly larger than the bulk value of 0.31-0.36 eV.