J
Jack Clayton
Researcher at Cree Inc.
Publications - 8
Citations - 288
Jack Clayton is an academic researcher from Cree Inc.. The author has contributed to research in topics: Power semiconductor device & Voltage. The author has an hindex of 8, co-authored 8 publications receiving 265 citations.
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Journal ArticleDOI
A 13 kV 4H-SiC n-Channel IGBT with Low Rdiff,on and Fast Switching
Mrinal K. Das,Q. Jon Zhang,Robert Callanan,Craig Capell,Jack Clayton,Matthew Donofrio,Sarah K. Haney,Fatima Husna,Charlotte Jonas,Jim Richmond,Joseph John Sumakeris +10 more
TL;DR: In this paper, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff of 22 mWcm2 which surpasses the 4HSiC material limit for unipolar devices.
Journal ArticleDOI
Development of 15 kV 4H-SiC IGBTs
Sei Hyung Ryu,Lin Cheng,Sarit Dhar,Craig Capell,Charlotte Jonas,Jack Clayton,Matt Donofrio,Michael J. O'Loughlin,Albert A. Burk,Anant K. Agarwal,John W. Palmour +10 more
TL;DR: In this article, the authors present the latest developments in ultra high voltage 4H-SiC IGBTs and compare P- and N-IGBTs in 4HSiC.
Proceedings ArticleDOI
High performance, ultra high voltage 4H-SiC IGBTs
Sei-Hyung Ryu,Craig Capell,Lin Cheng,Charlotte Jonas,Anand Gupta,Matt Donofrio,Jack Clayton,Michael J. O'Loughlin,Al Burk,David Grider,Anant K. Agarwal,John W. Palmour,Allen R. Hefner,Subhashish Bhattacharya +13 more
TL;DR: In this article, the authors present the latest developments in ultra high voltage 4H-SiC IGBTs, including buffer layer design, which includes controlling the doping concentration and the thickness of the field-stop buffer layers.
Proceedings ArticleDOI
Ultra high voltage IGBTs in 4H-SiC
Sei-Hyung Ryu,Craig Capell,Charlotte Jonas,Yemane Lemma,Michael J. O'Loughlin,Jack Clayton,E. Van Brunt,Khiem Lam,Jim Richmond,Albert A. Burk,David Grider,Scott Allen,John W. Palmour,Anant K. Agarwal,Arun Kadavelugu,Subhashish Bhattacharya +15 more
TL;DR: A 1 cm × 1 cm 4H-SiC N-IGBT exhibited a blocking voltage of 20.7 kV with a leakage current of 140 μA, which represents the highest blocking voltage reported from an MOS semiconductor power switching device to date.
Journal ArticleDOI
Ultra high voltage MOS controlled 4H-SiC power switching devices
Sei-Hyung Ryu,Craig Capell,E. Van Brunt,Charlotte Jonas,Michael J. O'Loughlin,Jack Clayton,Khiem Lam,Vipindas Pala,Brett Hull,Yemane Lemma,Daniel J. Lichtenwalner,Qing Chun Jon Zhang,Jim Richmond,P. Butler,David Grider,Jeffrey Casady,Scott Allen,John W. Palmour,Miguel Hinojosa,C.W. Tipton,Charles Scozzie +20 more
TL;DR: In this paper, the authors compared two MOS based UHV 4H-SiC power switching devices; 15 kV 4h-siC MOSFETs and 15 kv 4hSiC n-IGBTs, and showed a specific on-resistance of 204 mΩ cm2 at 25 °C, which increased to 570 m Ω cm 2 at 150 °C. They also showed that the use of a carrier storage layer (CSL) can significantly improve the conduction performance of the 15kV 4 h-Si