J
Jack T. Kavalieros
Researcher at Intel
Publications - 353
Citations - 10336
Jack T. Kavalieros is an academic researcher from Intel. The author has contributed to research in topics: Transistor & Layer (electronics). The author has an hindex of 55, co-authored 351 publications receiving 10238 citations. Previous affiliations of Jack T. Kavalieros include Metz.
Papers
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Patent
Transistor device with variously conformal gate dielectric layers
Seung Hoon Sung,Jack T. Kavalieros,Young Ian A,Metz Matthew,Uygar E. Avci,Merrill Devin,Penumatcha Ashish Verma,Lin Chia-Ching,Loh Owen +8 more
TL;DR: In this paper, the authors present a mechanism to provide electrical insulation between a gate and a channel region of a non-planar circuit device, where the gate structure and insulation spacers at opposite respective sides of the gate, each extend over a semiconductor fin structure.
Patent
A method to achieve a uniform group iv material layer in an aspect ratio trapping trench
Sanaz K. Gardner,Willy Rachmady,Le Van H,Matthew V. Metz,Seiyon Kim,Ashish Agrawal,Jack T. Kavalieros +6 more
TL;DR: In this article, the authors present a FinFET device that consists of a first fin structure including a first upper fin portion atop a first lower fin portion, followed by a second fin structure with a second upper fin atop a second lower fin.
Patent
Contact stacks to reduce hydrogen in thin film transistor
Arnab Sen Gupta,Matthew V. Metz,Benjamin Chu-kung,Sharma Abhishek A,Le Van H,Miriam R. Reshotko,Christopher J. Jezewski,Ryan E. Arch,Ande Kitamura,Jack T. Kavalieros,Seung Hoon Sung,Lawrence Wong,Ghani Tahir +12 more
TL;DR: In this article, the authors describe techniques for a semiconductor device including a substrate and a transistor above the substrate, where the transistor is separated from the channel layer by a gate dielectric layer.
Patent
Apparatus and methods to create a buffer which extends into a gated region of a transistor
Chandra S. Mohapatra,Gilbert Dewey,Anand S. Murthy,Glenn A. Glass,Willy Rachmady,Jack T. Kavalieros,Tahir Ghani,Metz Matthew +7 more
TL;DR: In this paper, the active channel and the sub-structure are formed in a narrow trench, such that defects due to lattice mismatch between the active channels and the substrate are terminated in the substructure.
Patent
Contact electrodes and dielectric structures for thin film transistors
Gilbert Dewey,Le Van H,Abhishek Sharma,Jack T. Kavalieros,Ma Sean T,Seung Hoon Sung,Nazila Haratipour,Tahir Ghani,Justin R. Weber,Shivaraman Shriram +9 more
TL;DR: In this article, the authors describe techniques for a transistor above the substrate, which includes a first gate dielectric layer with a first-and second-layer material above a gate electrode.