J
Jan Misiewicz
Researcher at Wrocław University of Technology
Publications - 585
Citations - 6611
Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.
Papers
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Proceedings ArticleDOI
Carrier dynamics in inhomogeneously broadened InAs/InP quantum-dot optical amplifiers
Ouri Karni,K. J. Kuchar,Amir Capua,Vissarion Mikhelashvili,Gadi Eisenstein,Grzegorz Sęk,Jan Misiewicz,V. Ivanov,J. P. Roithmaier +8 more
TL;DR: In this article, a multi-wavelength pump-probe characterization of the fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers is presented.
Journal ArticleDOI
Charge conversion of nearly free and impurity bound magneto-trions immersed in 2D electron or hole gas with optically tunable concentration
J. Jadczak,Leszek Bryja,Jan Misiewicz,Arkadiusz Wójs,Marek Potemski,Feng Liu,Dmitri R. Yakovlev,Manfred Bayer,Dirk Reuter,Andreas D. Wieck,Christine A. Nicoll,Ian Farrer,David A. Ritchie +12 more
TL;DR: In this article, a collection of precise photoluminescence maps (emission intensity versus energy and magnetic field) of superior-quality two-dimensional hole gases were reported, revealing field evolution of both direct and cyclotron-assisted recombination lines attributed to various excitonic complexes.
Proceedings ArticleDOI
Interband cascade lasers for wavelength specific applications in the 3–4 µm spectral range
A. Bauer,M. Dallner,Martin Kamp,Sven Höfling,L. Worschech,Alfred Forchel,L. Nähle,Peter Fuchs,M. Fischer,J. Koeth,Marcin Motyka,Grzegorz Sęk,Krzysztof Ryczko,Jan Misiewicz +13 more
TL;DR: In this paper, a set of six ICLs with varied widths of the optically active InAs QWs shows emission from 2.97 µm to 4.16 µm without further changes to the underlying layout.
Journal Article
Morphology, structural and absorption studies on gallium nitride powder
TL;DR: In this paper, a simple method of synthesis of nanocrystalline GaN powders is presented, and the morphology and structure of the powders are characterized by XRD and TEM methods.
Proceedings ArticleDOI
Low-threshold continuous-wave 1.55-μm GaInNAsSb lasers
Seth R. Bank,Hopil Bae,Homan Yuen,Mark A. Wistey,Lynford L. Goddard,James S. Harris,Robert Kudrawiec,Marta Gladysiewicz,Marcin Motyka,Jan Misiewicz +9 more
TL;DR: In this article, the first low-threshold 1.55-μm GaAs were grown on GaAs and the active layer was a single GaInNAsSb quantum well surrounded by strain-compensating GaNAs barriers.