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Jan Misiewicz

Researcher at Wrocław University of Technology

Publications -  585
Citations -  6611

Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.

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Yb 3+ and Tm 3+ concentration-dependent structural and optical properties of hexagonal NaGdF 4 nanocrystals

TL;DR: In this paper, a detailed investigation of the influence of Yb3+ and Tm3+ ions concentration on the structural and optical properties of NaGdF4 nanocrystals was performed.
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Optical Properties of Active Regions in Terahertz Quantum Cascade Lasers

TL;DR: In this paper, three independent absorption-like optical spectroscopy techniques were employed in order to study the band structure of the minibands formed within the conduction band, and the obtained energy separation between the second and third confined electron levels, expected to be predominantly contributing to the lasing, was found to be ~9meV.
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Investigation of dielectric cap induced intermixing of InxGa1−xAsyP1−y/InP quantum well laser structures by photoreflectance and photoluminescence

TL;DR: In this article, the influence of the cap stoichiometry on QWI has been analyzed and it has been found that the magnitude of the blue shift strongly depends on the stoichiometric of the dielectric film.
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Visualization of melanoma tumor with lectin-conjugated rare-earth doped fluoride nanocrystals

TL;DR: NPL lectin-NaGdF4:Eu3+ conjugated NC permitted distinct identification of contours of the melanoma tissue on histological sections using red excitation at 590-610 nm and near infrared emission of 700-720 nm, of potential practical significance for development of glycans-conjugated nanoparticles to be used for in vivo visualization of melanoma tumor.
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Carrier loss mechanisms in type II quantum wells for the active region of GaSb-based mid-infrared interband cascade lasers

TL;DR: In this paper, the authors measured the thermal quenching of InAs/GaInSb broken gap system quantum wells as a function of the thickness of the conduction and valence band wells.