J
Jan Misiewicz
Researcher at Wrocław University of Technology
Publications - 585
Citations - 6611
Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.
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Excitation mechanism and thermal emission quenching of Tb ions in silicon rich silicon oxide thin films grown by plasma-enhanced chemical vapour deposition—Do we need silicon nanoclusters?
Artur Podhorodecki,L W Golacki,G. Zatryb,Jan Misiewicz,J. Wang,Wojciech M. Jadwisienczak,K. Fedus,Jacek Wojcik,P. R. J. Wilson,Peter Mascher +9 more
TL;DR: In this paper, the excitation and emission properties of Tb ions in a Silicon Rich Silicon Oxide (SRSO) matrix obtained at different technological conditions were discussed by means of electron cyclotron resonance plasmaenhanced chemical vapour deposition, undoped and doped SRSO films with different Si content (33, 35, 39, 50 at.
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Contactless electroreflectance studies of free exciton binding energy in Zn1-xMgxO epilayers
M. Wełna,R. Kudrawiec,Agata Kaminska,A. Kozanecki,Bernhard Laumer,Martin Eickhoff,Jan Misiewicz +6 more
TL;DR: In this paper, contactless electroreflectance (CER) has been applied to study optical transitions in Zn1-xMgxO layers with magnesium concentration ≤44%. CER resonances related to free exciton and band-to-band transitions were clearly observed at room temperature.
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Influence of Nd dopant amount on microstructure and photoluminescence of TiO2:Nd thin films
Damian Wojcieszak,Michal Mazur,Danuta Kaczmarek,Jerzy Morgiel,G. Zatryb,Jaroslaw Domaradzki,Jan Misiewicz +6 more
TL;DR: The relationship between the Nd concentration, structural, optical and photoluminescence properties of prepared thin films was investigated and discussed in this paper using X-ray diffraction (XRD), transmission electron microscopy (TEM) and spectroscopic techniques.
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Growth of GaN epilayers on c-, m-, a-, and (20.1)-plane GaN bulk substrates obtained by ammonothermal method
M. Rudziński,Robert Kudrawiec,L. Janicki,Jarosław Serafińczuk,Robert Kucharski,M. Zając,Jan Misiewicz,Roman Doradzinski,Robert Dwilinski,Wlodek Strupinski +9 more
TL;DR: In this paper, the influence of surface preparation of substrates, MOCVD growth parameters, and the crystallographic orientation of substrate on the structural and optical properties of GaN epilayers was investigated and carefully analyzed.
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Three beam photoreflectance as a powerful method to investigate semiconductor heterostructures
Robert Kudrawiec,Grzegorz Sęk,P. Sitarek,Krzysztof Ryczko,Jan Misiewicz,Tao Wang,Alfred Forchel +6 more
TL;DR: In this article, the authors proposed three beam photoreflectance (TBPR) technique as a powerful tool to investigate the nature of PR resonances associated with transitions in quantum wells (QWs) placed in a weak surface electric field.