Jan Misiewicz

TL;DR: In this article, the same authors investigated the issue of the type II transition oscillator strength versus the InAs well width and temperature for two different quantum well layer structures, and showed that significant enhancement of the transition intensities could be predicted for W-like design of the well and increasing with temperature, as a consequence of various thermal energy gap coefficients of the involved materials.

TL;DR: In this article, the energy gap and spin-orbit splitting in InNAsSb alloys containing different amounts of nitrogen and antimony were studied, and it has been observed that nitrogen mainly affects the conduction band, without having any influence on the spinorbit splitting, whereas antimony significantly modifies the spin orbit splitting.

TL;DR: In this paper, a characterization of fundamental gain dynamics in recently developed InAs/InP quantum-dot semiconductor optical amplifiers is presented, where multi-wavelength pump-probe measurements are used to determine gain recovery rates, following a powerful optical pump pulse, at various wavelengths for different bias levels and pump excitation powers.

TL;DR: In this article, the influence of non-radiative recombination on the photoluminescence decay time (τPL) has been studied for GaInNAs/GaAs quantum wells with Ga- and In-rich environments of N atoms.

TL;DR: In this article, the authors present a few level rate equation model in a context of the interpretation of excitation power dependent exciton and biexciton emission intensity from single quantum-dot-like structures.