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Jan Misiewicz

Researcher at Wrocław University of Technology

Publications -  585
Citations -  6611

Jan Misiewicz is an academic researcher from Wrocław University of Technology. The author has contributed to research in topics: Photoluminescence & Quantum well. The author has an hindex of 32, co-authored 585 publications receiving 6195 citations.

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Photoluminescence from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells

TL;DR: In this article, the photoluminescence (PL) spectra obtained from as-grown and annealed GaN0.027As0.863Sb0.11∕GaAs single quantum wells (SQWs) were investigated.
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Increasing the optical transition oscillator strength in GaSb-based type II quantum wells

TL;DR: In this article, the oscillator strength of the fundamental optical transition in GaSb-based type II quantum well structures was investigated for the performance of interband cascade lasers using modulation spectroscopy, supported by eight-band k·p calculations.
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MOVPE technology and characterisation of silicon δ-doped GaAs and AlxGa1−xAs

TL;DR: In this paper, the influence of the growth temperature, SiH4 flow rate and AlxGa1−xAs composition on δ-doping characteristics is discussed, and properties of the Si δdoped structures were examined using capacitance-voltage (C-V) measurements, photoreflectance spectroscopy, micro-photoluminescence, micro Raman and photocurrent spectroscopies.
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β-NaGdF4:Eu3+ nanocrystal markers for melanoma tumor imaging

TL;DR: The strategy of tuning the optical and structural properties of Eu doped nanocrystals is described with the emphasis on obtaining NCs with high brightness and photostability at the desired excitation and emission range.
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Interface and Surface Photoreflectance Spectra for GaAs/Si-GaAs Structures

TL;DR: In this article, the dispersion relations (Kramers-kronig analysis) are used for the PR spectra of heavily doped epilayers of GaAs/SI-GaAs structures.